Researcher profile

Anirudh Chandrasekaran

Anirudh Chandrasekaran contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.dis-nn cond-mat.supr-con

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preprint2025arXiv

Designing Topological High-Order Van Hove Singularities: Twisted Bilayer Kagomé

The interplay of high-order Van Hove singularities and topology plays a central role in determining the nature of the electronic correlations governing the phase of a system with unique signatures characterising their presence. Layered van der Waals heterostuctures are ideal systems for band engineering through the use of twisting and proximity effects. Here, we use symmetry to demonstrate how twisted Kagomé bilayers can host topological high-order Van Hove singularities. We study a commensurate system with a large twist angle and demonstrate how the initial choice of high-symmetry stacking order can greatly influence the electronic structure and topology of the system. We, furthermore, study the sublattice interference in the system. Our results illustrate the rich energy landscape of twisted Kagomé bilayers and unveil large Chern numbers (of order 10), establishing twisted bilayer Kagomé as a natural playground for probing the mixing of strong correlations and topology.

preprint2022arXiv

Effect of disorder on density of states and conductivity in higher order van Hove singularities in two dimensional bands

We study systems with energy bands in two dimensions, hosting higher order Van Hove singularities (HOVHS) in the presence of disorder, using standard diagrammatic techniques for impurity averaging. In the clean limit, such singularities cause power-law divergence in the density of states (DOS), and this is expected to strongly affect electronic correlation. In order to analyse the signatures of these singularities in disordered systems, we employ various Born approximations, culminating in the self-consistent (non) Born approximation. Although the divergence of the DOS is smeared, we find that the shape of the DOS, as characterized by the power law tail and the universal ratio of prefactors, is retained slightly away from the singularity. This could help us to understand current and future experiments on materials that can be tuned to host HOVHS. The impurity induced smearing is calculated and analysed for several test cases of singularities. We also study the effects of impurities on electrical conductivity and determine the regimes where the quantitative features of the power law DOS manifest in the conductivity.

preprint2019arXiv

Catastrophe theory classification of Fermi surface topological transitions in two dimensions

We classify all possible singularities in the electronic dispersion of two-dimensional systems that occur when the Fermi surface changes topology, using catastrophe theory. For systems with up to seven control parameters (i.e., pressure, strain, bias voltage, etc), the theory guarantees that the singularity belongs to to one of seventeen standard types. We show that at each of these singularities the density of states diverges as a power law, with a universal exponent characteristic of the particular catastrophe, and we provide its universal ratio of amplitudes of the prefactors of energies above and below the singularity. We further show that crystal symmetry restricts which types of catastrophes can occur at the points of high symmetry in the Brillouin zone. For each of the seventeen wallpaper groups in two-dimensions, we list which catastrophes are possible at each high symmetry point.