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Researcher profile

Aniruddha Konar

Aniruddha Konar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

6 published item(s)

preprint2013arXiv

Effect of the Gate-dielectric stack on the quantum screening of the two-dimensional electron gas in silicon inversion layer

This article develops a consistent theory of free carrier screening of a two-dimensional electron gas in the silicon inversion layer in the presence of stacked layers of dielectric environment-commonly knows as gate stack in context of field-effect transistors. It is shown that the finite thickness and of dielectric stacks alters the free carrier screening, a crucial quantity, which determines screened coulomb interaction in the inversion layer, and ubiquitously appears in carrier transport theory in semiconductors. Results are analytical and can be used to accurate prediction Coulomb-interaction limited mobility in field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2

Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present the best planar electrostatic control in a device, but also lend themselves readily for dielectric engineering. In this work, we experimentally investigated the dielectric effect on the Raman and photoluminescence (PL) spectra of monolayer MoS2 by comparing samples with and without HfO2 on top by atomic layer deposition (ALD). Based on considerations of the thermal, doping, strain and dielectric screening influences, it is found that the red shift in the Raman spectrum largely stems from modulation doping of MoS2 by the ALD HfO2, and the red shift in the PL spectrum is most likely due to strain imparted on MoS2 by HfO2. Our work also suggests that due to the intricate dependence of band structure of monolayer MoS2 on strain, one must be cautious to interpret its Raman and PL spectroscopy.

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preprint2011arXiv

High field transport in graphene

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission. Non-equilibrium (hot) phonon effect was studied by Monte Carlo (MC) simulations. MC simulation confirms that hot phonon effects play a dominant role in current saturation in graphene. Current degradation due to elastic scattering events is much smaller compared to the hot phonon effect. Transient phenomenon as such as velocity overshoot was also studied using MC simulation. The simulation results shows promising potential for graphene to be used in high speed electronic devices by shrinking the channel length below 100nm if electrostatic control can be exercised in the absence of a band gap.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interband absorption in single layer hexagonal boron nitride

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal boron nitride is calculated using a tight-binding Hamiltonian. The absorption is found to be monotonically decreasing function of photon energy compared to graphene where absorption coefficient is independent of photon energy and characterized by the effective fine-structure constant.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropic charge transport in non-polar GaN QW: polarization induced charge and interface roughness scattering

Charge transport in GaN quantum well (QW) devices grown in non-polar direction has been theoretically investigated . Emergence of anisotropic line charge scattering mechanism originating as a result of anisotropic rough surface morphology in conjunction with in-plane built-in polarization has been proposed. It has shown that in-plane growth anisotropy leads to large anisotropic carrier transport at low temperatures. At high temperatures, this anisotropy in charge transport is partially washed out by strong isotropic optical phonon scattering in GaN QW.

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