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Andrey L. Kutepov

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cond-mat.mtrl-sci cond-mat.str-el

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preprint2021arXiv

Full versus quasi-particle self consistency in vertex corrected GW approaches

Using seven semiconductors/insulators with band gaps covering the range from 1 eV to 10 eV we systematically explore the performance of two different variants of self-consistency associated with famous Hedin's system of equations: the full self-consistency and the so called quasi-particle approximation to it. The pros and cons of these two variants of self-consistency are sufficiently well documented in literature for the simplest GW approximation to the Hedin's equations. Our study, therefore, aims primarily at the level of theory beyond GW approximation, i.e. at the level of theory which includes vertex corrections. Whereas quasi-particle self-consistency has certain advantages at GW level (well known fact), the situation becomes quite different when vertex corrections are included. In the variant with full self-consistency, vertex corrections (both for polarizability and for self energy) systematically reduce the calculated band gaps making them closer to the experimental values. In the variant with quasi-particle self-consistency, however, an inclusion of the same diagrams has considerably larger effect and calculated band gaps become severely underestimated. Different effect of vertex corrections in two variants of self-consistency can be related to the Z-factor cancellation which plays positive role in quasi-particle self-consistency at GW level of theory but appears to be destructive for the quasi-particle approximation when higher order diagrams are included. Second result of our study is that we were able to reproduce the results obtained with the Questaal code using our FlapwMBPT code when the same variant of self-consistency (quasi-particle) and the same level of vertex corrections (for polarizability only, static approximation for screened interaction, and Tamm-Dancoff approximation for the Bethe-Salpeter equation) are used.

preprint2020arXiv

Self-consistent GW method: O(N) algorithm for polarizability and self energy

An efficient implementation of the self-consistent GW method in the FlapwMBPT code (https://www.bnl.gov/cmpmsd/flapwmbpt/) is presented. It features the evaluation of polarizability and self-energy which scales linearly with respect to the system size. Altogether the computational time scaling was measured to be between linear and quadratic in the applications to silicon supercells with up to 72 atoms. Application to such materials as paracostibite CoSbS, supercells of La $_{2}$ CuO $_{4}$ (up to 56 atoms) and SmB $_{6}$ illustrate the potential of the approach in computational material science.

preprint2018arXiv

Electronic structure and thermoelectric properties of CoAsSb with post-DFT approaches

We study the electronic structure and thermoelectric properties of recently synthesized CoAsSb. The calculated bandgap becomes more accurate for increasingly-complex electronic structure methods: generalized gradient approximation, hybrid functionals, self-consistent linearized quasiparticle GW method (LQSGW), and LQSGW with simplified vertex corrections. By equating the bandgaps of each method from a rigid shift of the bands, we evaluate the contributions made to thermoelectric properties beyond the bandgap. In doing so, we evaluate the efficacy of a common-practice: a rigid shift applied to less-costly electronic structure methods in order to gain some accuracy of the more-costly methods. We find that while the shift made the Seebeck coefficients much closer to one another than from the original electronic structures, there remain differences in the Goldsmid-Sharp (thermoelectric) bandgap between the methods and from the intended electronic bandgap. Additionally, some lasting differences in temperature dependence remain between the methods.

preprint2016arXiv

Electronic structure of Na, K, Si, and LiF from self-consistent solution of Hedin's equations including vertex corrections

A few self-consistent schemes to solve the Hedin equations are presented. They include vertex corrections of different complexity. Commonly used quasiparticle approximation for the Green function and static approximation for the screened interaction are avoided altogether. Using alkali metals Na and K as well as semiconductor Si and wide gap insulator LiF as examples, it is shown that both the vertex corrections in the polarizability P and in the self energy $Σ$ are important. Particularly, vertex corrections in $Σ$ with proper treatment of frequency dependence of the screened interaction always reduce calculated band widths/gaps, improving the agreement with experiment. The complexity of the vertex included in P and in $Σ$ can be different. Whereas in the case of polarizability one generally has to solve the Bethe-Salpeter equation for the corresponding vertex function, it is enough (for the materials in this study) to include the vertex of the first order in the self energy. The calculations with appropriate vertices show remarkable improvement in the calculated band widths and band gaps as compared to the self-consistent GW approximation as well as to the self-consistent quasiparticle GW approximation.

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