Characterization of solution processed TiOx buffer layers in inverted organic photovoltaics by XPS and DFT studies
We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features which are absent in spectra of titanium butoxide deposited on Si and are attributed to appearance of Ti^{3+} valence states in ITO/TiOx. This conclusion is confirmed by density functional theory electronic structure calculations of stoichiometric TiO2 and oxygen deficient TiO_{2-1/8}. XPS C 1s measurements show the formation of C-O and O-C=O bonds which evidence the presence of residual carbon which can draw oxygen from the film network and induce the formation of fraction of Ti3+ states in TiOx films.