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Achilleas Savva

Achilleas Savva contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2016arXiv

High Performance Inverted Organic Photovoltaics Without Hole Selective Contact

A detailed investigation of the functionality of inverted organic photovoltaics (OPVs) using bare Ag contacts as top electrode is presented. The inverted OPVs without hole transporting layer (HTL) exhibit a significant gain in hole carrier selectivity and power conversion efficiency (PCE) after exposure in ambient conditions. Inverted OPVs comprised of ITO/ZnO/poly(3-hexylthiophene-2,5-diyl):phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if the devices are exposed in air for over 4 days. As concluded through a series of measurements, the oxygen presence is essential to obtain fully operational solar cell devices without HTL. Moreover, accelerated stability tests under damp heat conditions (RH=85% and T=65oC) performed to non-encapsulated OPVs demonstrate that HTL-free inverted OPVs exhibit comparable stability to the reference inverted OPVs. Importantly, it is shown that bare Ag top electrodes can be efficiently used in inverted OPVs using various high performance polymer:fullerene bulk heterojunction material systems demonstrating 6.5% power conversion efficiencies.

preprint2016arXiv

Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides

Perovskite photovoltaics (PVs) have attracted attention because of their excellent power conversion efficiency (PCE). Critical issues related to large area PV performance, reliability and lifetime need to be addressed. Here, we show that doped metal oxides can provide ideal electron selectivity, improved reliability and stability for perovskite PVs. We report p-i-n perovskite PVs with device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminum doped zinc oxide (AZO) electron selective contact with hysteresis-free PCE of over 13% and high fill factor values in the range of 80%. AZO provides suitable energy levels for carrier selectivity, neutralizes the presence of pinholes and provides intimate interfaces. Devices using AZO exhibit an average PCE increase of over 20% compared with the devices without AZO and maintain the high PCE for the larger area devices reported. Furthermore, the device stability of p-i-n perovskite solar cells under the ISOS-D-1 is enhanced when AZO is used, and maintains 100% of the initial PCE for over 1000 hours of exposure when AZO/Au is used as the top electrode. Our results indicate the importance of doped metal oxides as carrier selective contacts to achieve reliable and high performance long lived large area perovskite solar cells.

preprint2014arXiv

Characterization of solution processed TiOx buffer layers in inverted organic photovoltaics by XPS and DFT studies

We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features which are absent in spectra of titanium butoxide deposited on Si and are attributed to appearance of Ti^{3+} valence states in ITO/TiOx. This conclusion is confirmed by density functional theory electronic structure calculations of stoichiometric TiO2 and oxygen deficient TiO_{2-1/8}. XPS C 1s measurements show the formation of C-O and O-C=O bonds which evidence the presence of residual carbon which can draw oxygen from the film network and induce the formation of fraction of Ti3+ states in TiOx films.