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Andrei Varykhalov

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2022arXiv

Is there a polaron signature in angle-resolved photoemission of CsPbBr3?

The formation of large polarons has been proposed as reason for the high defect tolerance, low mobility, low charge carrier trapping and low nonradiative recombination rates of lead halide perovskites. Recently, direct evidence for large-polaron formation has been reported from a 50% effective mass enhancement in angle-resolved photoemission of CsPbBr3 over theory for the orthorhombic structure. We present in-depth band dispersion measurements of CsPbBr3 and GW calculations which lead to almost identical effective masses at the valence band maximum of 0.203+/-0.016 m0 in experiment and 0.226 m0 in orthorhombic theory. We argue that the effective mass can be explained solely on the basis of electron-electron correlation and large-polaron formation cannot be concluded from photoemission data.

preprint2019arXiv

Modular Arithmetic with Nodal Lines: Drumhead Surface States in ZrSiTe

We study the electronic structure of the nodal line semimetal ZrSiTe both experimentally and theoretically. We find two different surface states in ZrSiTe - topological drumhead surface states and trivial floating band surface states. Using the spectra of Wilson loops, we show that a non-trivial Berry phase that exists in a confined region within the Brillouin Zone gives rise to the topological drumhead-type surface states. The $\mathbb{Z}_2$ structure of the Berry phase induces a $\mathbb{Z}_2$ 'modular arithmetic' of the surface states, allowing surface states deriving from different nodal lines to hybridize and gap out, which can be probed by a set of Wilson loops. Our findings are confirmed by \textit{ab-initio} calculations and angle-resolved photoemission experiments, which are in excellent agreement with each other and the topological analysis. This is the first complete characterization of topological surface states in the family of square-net based nodal line semimetals and thus fundamentally increases the understanding of the topological nature of this growing class of topological semimetals.

preprint2016arXiv

Non-symmorphic band degeneracy at the Fermi level in ZrSiTe

Non-symmorphic materials have recently been predicted to exhibit many different exotic features in their electronic structures. These originate from forced band degeneracies caused by the non-symmorphic symmetry, which not only creates the possibility to realize Dirac semimetals, but also recently resulted in the prediction of novel quasiparticles beyond the usual Dirac, Weyl or Majorana fermions, which can only exist in the solid state. Experimental realization of non-symmorphic materials that have the Fermi level located at the degenerate point is difficult, however, due to the requirement of an odd band filling. In order to investigate the effect of forced band degeneracies on the transport behavior, a material that has such a degeneracy at or close to the Fermi level is desired. Here, we show with angular resolved photoemission experiments supported by density functional calculations, that ZrSiTe hosts several fourfold degenerate Dirac crossings at the X point, resulting from non-symmorphic symmetry. These crossings form a Dirac line node along XR, which is located almost directly at the Fermi level and shows almost no dispersion in energy. ZrSiTe is thus the first real material that allows for transport measurements investigating Dirac fermions that originate from non-symmorphic symmetry.

preprint2015arXiv

Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators

Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

preprint2014arXiv

ARPES insights on the metallic states of YbB6(001): E(k) dispersion, temporal changes and spatial variation

We report high resolution Angle Resolved PhotoElectron Spectroscopy (ARPES) results on the (001) cleavage surface of YbB$_{6}$, a rare-earth compound which has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the YbB$_{6}$(001) surface Brillouin zone, and whose full (E,$k$)-dispersion relation can be measured wholly unmasked by states from the rest of the electronic structure. Although the two-dimensional character of these metallic states is confirmed by their lack of out-of-plane dispersion, two new aspects are revealed in these experiments. Firstly, these states do not resemble two branches of opposite, linear velocity that cross at a Dirac point, but rather straightforward parabolas which terminate to high binding energy with a clear band bottom. Secondly, these states are sensitive to time-dependent changes of the YbB$_{6}$ surface under ultrahigh vacuum conditions. Adding the fact that these data from cleaved YbB$_{6}$ surfaces also display spatial variations in the electronic structure, it appears there is little in common between the theoretical expectations for an idealized YbB$_{6}$(001) crystal truncation on the one hand, and these ARPES data from real cleavage surfaces on the other.

preprint2013arXiv

Anisotropic two-dimensional electron gas at SrTiO3(110) protected by its native overlayer

Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a 2DEG -the SrTiO3(110)-(4 x 1) surface, natively terminated with one monolayer of chemically-inert titania. Oxygen vacancies induced by synchrotron radiation migrate under- neath this overlayer, this leads to a confining potential and electron doping such that a 2DEG develops. Our angular resolved photoemission spectroscopy (ARPES) and theoretical results show that confinement along (110) is strikingly different from a (001) crystal orientation. In particular the quantized subbands show a surprising "semi-heavy" band, in contrast to the analogue in the bulk, and a high electronic anisotropy. This anisotropy and even the effective mass of the (110) 2DEG is tunable by doping, offering a high flexibility to engineer the properties of this system.