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Researcher profile

Andrei Gloskovskii

Andrei Gloskovskii contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

5 published item(s)

preprint2025arXiv

Extending the Growth Temperature-N Concentration Regime Through Pd Doping in Fe4N Thin Films

Fe4N is a well-known anti-perovskite compound exhibiting high magnetization, high chemical stability, low coercivity, high Curie temperature, and high spin-polarization ratio. Therefore, it is a viable candidate for applications in spintronic and magnetic storage devices. However, the Fe4N phase is formed in a narrow substrate temperature (Ts)-N concentration (Nc) regime in the phase diagram of Fe-N. It has been observed that a slight N deficiency will lead to impurity of alpha-Fe, and some N efficiency would result in epsilon-Fe3N phase. Through this work, it has been demonstrated that the doping of Pd can be suitably utilized to extend the Ts-Nc regime for the growth of Fe4N thin films. EXAFS analysis indicate that Pd atoms are substituting corner Fe atoms. Magnetization measurements reveal that the saturation magnetization reduces nominally with Pd doping up to 13 at.%. Therefore, it is foreseen that Pd doping is effective in extending the Fe4N phase formation regime without a significant impact on its structural, electronic, and magnetic properties.

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preprint2023arXiv

Modulation-Doping a Correlated Electron Insulator

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

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preprint2022arXiv

Quantitative investigation of the 4$f$ occupation in the quasikagome Kondo lattice CeRh$_{1-x}$Pd$_x$Sn

CeRhSn with the Ce atoms forming a quasikagome lattice in the hexagonal plane has recently been discussed in the context of quantum criticality driven by magnetic frustration. Furthermore, it has been reported that the successive substitution of Rh by Pd leads to magnetic order. Here we have investigated the change of the 4$f$ occupation in the substitution series CeRh$_{1-x}$Pd$_x$Sn for for $x$ = 0, 0.1, 0.3, 0.5, 0.75 by means of photoelectron spectroscopy with hard x-rays (HAXPES). The quantitative analysis of the core level spectra with a combined full multiplet and configuration interaction analysis shows a smooth decrease of the 4$f^0$ contribution with rising $x$ due to an increase of the effective 4$f$ binding energy $\varepsilon_{4f}$ and the reduction of the effective hybridization $V_\text{eff}$. We further compare valence band data with the calculated partial density of states and find that the Pd 4$d$ states are about 1eV further away from the Ce 4$f$ states at the Fermi energy than the Rh 4$d$ states. In fact, the effective binding energy $\varepsilon_{4f}$ of the 4$f$ states in the configuration interaction analysis of the core level spectra decreases by the same amount.

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preprint2021arXiv

Time-resolved diffraction and photoelectron spectroscopy investigation of the reactive molecular beam epitaxy of $\mathrm{Fe_3O_4}$ ultrathin films

We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular beam epitaxy (RMBE) of $\mathrm{Fe_3O_4}$ ultrathin films on various substrates. Reciprocal space maps are recorded during the deposition of $\mathrm{Fe_3O_4}$ on $\mathrm{SrTiO_3(001)}$, MgO(001) and NiO/MgO(001) in order to observe the temporal evolution of Bragg reflections sensitive to the octahedral and tetrahedral sublattices of the inverse spinel structure of $\mathrm{Fe_3O_4}$. A time delay between the appearance of rock salt and spinel-exclusive reflections reveals that first, the iron oxide film grows with $\mathrm{Fe_{1-δ}O}$ rock salt structure with exclusive occupation of octahedral lattice sites. When this film is 1.1$\,$nm thick, the further growth of the iron oxide film proceeds in the inverse spinel structure, with both octahedral and tetrahedral lattice sites being occupied. In addition, iron oxide on $\mathrm{SrTiO_3(001)}$ initially grows with none of these structures. Here, the formation of the rock salt structure starts when the film is 1.5$\,$nm thick. This is confirmed by tr-HAXPES data obtained during growth of iron oxide on $\mathrm{SrTiO_3(001)}$, which demonstrate an excess of $\mathrm{Fe^{2+}}$ cations in growing films thinner than 3.2$\,$nm. This rock salt phase only appears during growth and vanishes after the supply of the Fe molecular beam is stopped. Thus, it can be concluded the rock salt structure of the interlayer is a property of the dynamic growth process. The tr-GISAXS data link these structural results to an island growth mode of the first 2-3$\,$nm on both MgO(001) and $\mathrm{SrTiO_3(001)}$ substrates.

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preprint2020arXiv

Impact of Fe substitution on the electronic structure of URu$_2$Si$_2$

The application of pressure as well as the successive substitution of Ru with Fe in the hidden order (HO) compound URu$_2$Si$_2$ leads to the formation of the large moment antiferromagnetic phase (LMAFM). Here we have investigated the substitution series URu$_{2-x}$Fe$_x$Si$_2$ with $x$ = 0.2 and 0.3 with non-resonant inelastic x-ray scattering (NIXS) and 4$f$ core-level photoelectron spectroscopy with hard x-rays (HAXPES). NIXS shows that the substitution of Fe has no impact on the symmetry of the ground-state wave function. In HAXPES we find no shift of spectral weight that would be indicative for a change of the 5$f$-electron count. Consequently, changes in the exchange interaction $\cal{J}$ due to substitution must be minor so that the conjecture of chemical pressure seems unlikely. An alternative scenario is discussed, namely the formation of long range magnetic order due the substitution induced local enhancement of the magnetization in the vicinity of the $f$-electron ions while the overall electronic structure remains unchanged.

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