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A global effort is ongoing in the scientific community and in the Maker Movement, which focuses on creating devices and tinkering with them, to reverse engineer commercial medical equipment and get it to healthcare workers. For these low-tech solutions to have a real impact, it is important for them to coalesce around approved designs.
Raman lasers based on integrated silica whispering gallery mode resonant cavities have enabled numerous applications from telecommunications to biodetection. To overcome the intrinsically low Raman gain value of silica, these devices leverage their ultra-high quality factors (Q), allowing sub-mW stimulated Raman scattering (SRS) lasing thresholds to be achieved. A closely related nonlinear behavior to SRS is stimulated anti-Stokes Raman scattering (SARS). This nonlinear optical process combines the pump photon with the SRS photon to generate an upconverted photon. Therefore, in order to achieve SARS, the efficiency of the SRS process must be high. As a result, achieving SARS in on-chip resonant cavities has been challenging due to the low lasing efficiencies of these devices. In the present work, metal-doped ultra-high Q (Q>107) silica microcavity arrays are fabricated on-chip. The metal-dopant plays multiple roles in improving the device performance. It increases the Raman gain of the cavity material, and it decreases the optical mode area, thus increasing the circulating intensity. As a result, these devices have SRS lasing efficiencies that are over 10x larger than conventional silica microcavities while maintaining low lasing thresholds. This combination enables SARS to be generated with sub-mW input powers and significantly improved anti-Stokes Raman lasing efficiency.
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