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Anastasiia Pervishko

Anastasiia Pervishko contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Quantum-machine-learning channel discrimination

In the problem of quantum channel discrimination, one distinguishes between a given number of quantum channels, which is done by sending an input state through a channel and measuring the output state. This work studies applications of variational quantum circuits and machine learning techniques for discriminating such channels. In particular, we explore (i) the practical implementation of embedding this task into the framework of variational quantum computing, (ii) training a quantum classifier based on variational quantum circuits, and (iii) applying the quantum kernel estimation technique. For testing these three channel discrimination approaches, we considered a pair of entanglement-breaking channels and the depolarizing channel with two different depolarization factors. For the approach (i), we address solving the quantum channel discrimination problem using widely discussed parallel and sequential strategies. We show the advantage of the latter in terms of better convergence with less quantum resources. Quantum channel discrimination with a variational quantum classifier (ii) allows one to operate even with random and mixed input states and simple variational circuits. The kernel-based classification approach (iii) is also found effective as it allows one to discriminate depolarizing channels associated not with just fixed values of the depolarization factor, but with ranges of it. Additionally, we discovered that a simple modification of one of the commonly used kernels significantly increases the efficiency of this approach. Finally, our numerical findings reveal that the performance of variational methods of channel discrimination depends on the trace of the product of the output states. These findings demonstrate that quantum machine learning can be used to discriminate channels, such as those representing physical noise processes.

preprint2021arXiv

On the origin of electron accumulation layer at clean InAs(111) surfaces

In this paper, we provide a comprehensive theoretical analysis of the electronic structure of InAs(111) surfaces with a special attention paid to the energy region close to the fundamental bandgap. Starting from the bulk electronic structure of InAs as calculated using PBE functional with included Hubbard correction and spin-orbit coupling, we deliver proper values for the bandgap, split-off energy, as well as effective electron, light- and heavy-hole masses in full consistency with available experimental results. On the basis of optimized atomic surfaces we recover scanning tunneling microscopy images, which being supplied with accessible experimental data make it possible to speculate on the formation of electron accumulation layer for both As- and In-terminated InAs(111) surfaces. Moreover, these results are accompanied by band structure simulations of conduction band states.