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Researcher profile

Anand Sharma

Anand Sharma contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scihep-exhep-phphysics.app-ph

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Published work

10 published item(s)

preprint2026arXiv

From obstacle to opportunity: uncovering the silver lining of pileup

The lack of evidence for Beyond Standard Model (BSM) particles might be due to their light mass and very weak interactions, as exemplified by BSM long-lived particles (LLPs). Such particles can be produced from $B$ or $D$ hadron decays. Typically, the high values of pileup (PU) in hadron colliders are expected to pose a major challenge in light new physics searches. We propose a fresh perspective that counters this conventional wisdom: instead of viewing PU solely as an impediment, we highlight its potential benefits in searches for light LLPs from $B$ or $D$ hadron decays at HL-LHC and FCC-hh. In particular, certain forward detectors in LHC experiments, such as the Zero Degree Calorimeters (ZDC), which are currently not utilized for LLP searches, can be repurposed with strategic modifications to play a crucial role in this endeavor. Leveraging a combination of forward and central detectors, along with smart strategies for triggering and offline analysis, we demonstrate the potential for exploring light LLPs in high PU scenarios.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dielectric/semiconductor interfacial doping to develop solution processed high performance 1 V ambipolar oxide-transistor and its application as CMOS inverter

p-type doping from the dielectric/semiconductor interface of a SnO2 thin film transistor (TFT) has been utilized to develop high carrier mobility balanced ambipolar oxide-transistor. To introduce this interfacial-doping, bottom-gate top-contact TFTs have been fabricated by using two different ion-conducting oxide dielectrics which contain trivalent atoms. These ion-conducting dielectrics are LilnO2 and LiGaO2 respectively, containing mobile Li+ ion. During SnO2 thin film fabrication on top of the ionic dielectric, those trivalent atoms allow p- doping to the interfacial SnO2 layer to introduce the hole conduction in channel of TFT. To realize this interfacial doping phenomena, a reference TFT has been fabricated with Li2ZnO2 dielectric under the same condition that contains divalent zinc (Zn) atom. Our comparative electrical data indicates that TFTs with LilnO2 and LiGaO2 dielectric are ambipolar in nature whereas, TFT with Li2ZnO2 dielectric is a unipolar n-channel transistor which reveals the interfacial doping of SnO2. Most interestingly, by using LilnO2 dielectric, we are capable to fabricated 1.0 V balanced ambipolar TFT with a high electron and hole mobility values of 7 cm2 V-1 s-1and 8 cm2 V-1 s-1 respectively with an on/off ratio >102 for both operations which has been utilized for low-voltage CMOS inverter fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Multilogarithmic velocity renormalization in graphene

We reexamine the effect of long-range Coulomb interactions on the quasiparticle velocity in graphene. Using a nonperturbative functional renormalization group approach with partial bosonization in the forward scattering channel and momentum transfer cutoff scheme, we calculate the quasiparticle velocity, $v (k)$, and the quasiparticle residue, $Z$, with frequency-dependent polarization. One of our most striking results is that $v ( k ) \propto \ln [ C_k (α) / k ]$ where the momentum- and interaction-dependent cutoff scale $C_k (α) $ vanishes logarithmically for $k \rightarrow 0$. Here $k$ is measured with respect to one of the charge neutrality (Dirac) points and $α=2.2$ is the strength of dimensionless bare interaction. Moreover, we also demonstrate that the so-obtained multilogarithmic singularity is reconcilable with the perturbative expansion of $v (k)$ in powers of the bare interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Non-perturbative renormalization group calculation of the quasi-particle velocity and the dielectric function of graphene

Using a non-perturbative functional renormalization group approach we calculate the renormalized quasi-particle velocity $v (k)$ and the static dielectric function $ε( k )$ of suspended graphene as functions of an external momentum $k$. Our numerical result for $v (k )$ can be fitted by $v ( k ) / v_F = A + B \ln ( Λ_0 / k )$, where $v_F$ is the bare Fermi velocity, $Λ_0$ is an ultraviolet cutoff, and $A = 1.37$, $B =0.51$ for the physically relevant value ($e^2/v_F =2.2$) of the coupling constant. In contrast to calculations based on the static random-phase approximation, we find that $ε(k )$ approaches unity for $k \rightarrow 0$. Our result for $v (k )$ agrees very well with a recent measurement by Elias et al. [Nat. Phys. 7, 701 (2011)].

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Summing parquet diagrams using the functional renormalization group: X-ray problem revisited

We present a simple method for summing so-called parquet diagrams of fermionic many-body systems with competing instabilities using the functional renormalization group. Our method is based on partial bosonization of the interaction utilizing multi-channel Hubbard-Stratonovich transformations. A simple truncation of the resulting flow equations, retaining only the frequency-independent parts of the two-point and three-point vertices amounts to solving coupled Bethe-Salpeter equations for the effective interaction to leading logarithmic order. We apply our method by revisiting the X-ray problem and deriving the singular frequency dependence of the X-ray response function and the particle-particle susceptibility. Our method is quite general and should be useful in many-body problems involving strong fluctuations in several scattering channels.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Van der Waals forces and electron-electron interactions in two strained graphene layers

We evaluate the van der Waals (vdW) interaction energy at zero temperature between two undoped strained graphene layers separated by a finite distance. We consider the following three models for the anisotropic case: (a) where one of the two layers is uniaxially strained, (b) the two layers are strained in the same direction, and (c) one of the layers is strained in the perpendicular direction with respect to the other. We find that for all three models and given value of the electron-electron interaction coupling, the vdW interaction energy increases with increasing anisotropy. The effect is most striking for the case when both layers are strained in the same direction where we observe up to an order of magnitude increase in the strained relative to the unstrained case. We also investigate the effect of electron electron interaction renormalization in the region of large separation between the strained graphene layers. We find that the many-body renormalization contributions to the correlation energy are non negligible and the vdW interaction energy decreases as a function of increasing distance between the layers due to renormalization of the Fermi velocity, the anisotropy, and the effective interaction. Our analysis can be useful in designing novel graphene-based vdW heterostructures which, in recent times, has seen an upsurge in research activity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effect of Uniaxial Strain on Ferromagnetic Instability and Formation of Localized Magnetic States on Adatoms in Graphene

We investigate the effect of an applied uniaxial strain on the ferromagnetic instability due to long- range Coulomb interaction between Dirac fermions in graphene. In case of undeformed graphene the ferromagnetic exchange instability occurs at sufficiently strong interaction within the Hartree- Fock approximation. In this work we show that using the same theoretical framework but with an additional applied uniaxial strain, the transition can occur for much weaker interaction, within the range in suspended graphene. We also study the consequence of strain on the formation of localized magnetic states on adatoms in graphene. We systematically analyze the interplay between the anisotropic (strain- induced) nature of the Dirac fermions in graphene, on- site Hubbard interaction at the impurity and the hybridization between the graphene and impurity electrons. The polarization of the electrons in the localized orbital is numerically calculated within the mean- field self- consistent scheme. We obtain complete phase diagram containing non- magnetic as well as magnetic regions and our results can find prospective application in the field of carbon- based spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Interacting Anisotropic Dirac Fermions in Strained Graphene and Related Systems

We study the role of long-range electron-electron interactions in a system of two-dimensional anisotropic Dirac fermions, which naturally appear in uniaxially strained graphene, graphene in external potentials, some strongly anisotropic topological insulators, and engineered anisotropic graphene structures. We find that while for small interactions and anisotropy the system restores the conventional isotropic Dirac liquid behavior, strong enough anisotropy can lead to the formation of a quasi-one dimensional electronic phase with dominant charge order (anisotropic excitonic insulator).

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Greenberger-Horne-Zeilinger States in Quantum Dot Molecule

We present a microscopic theory of a lateral quantum dot molecule in a radial magnetic field with a Greenberger- Horne- Zeilinger (GHZ) maximally entangled three particle groundstate. The quantum dot molecule consists of three quantum dots with one electron spin each forming a central equilateral triangle. The anti-ferromagnetic spin-spin interaction is changed to the ferromagnetic interaction by additional doubly occupied quantum dots, one dot near each side of a triangle. The magnetic field is provided by micro-magnets. The interaction among the electrons is described within an extended Hubbard Hamiltonian and electronic states are obtained using configuration interaction approach. The set of parameters is established for which the ground state of the molecule in a radial magnetic field is well approximated by a GHZ state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Macroscopic quantum state in a semiconductor device

We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by gate structure realizes a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and anti-ferromagnetic. The quantum state is a semiconductor implementation of an integer spin-one antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.

0 citations0 reviewsNo code linkedOpen access