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An-Shao Lien

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cond-mat.mes-hall cond-mat.dis-nn

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preprint2011arXiv

Temporal universal conductance fluctuations in RuO$_2$ nanowires due to mobile defects

Temporal universal conductance fluctuations (TUCF) are observed in RuO$_2$ nanowires at cryogenic temperatures. The fluctuations persist up to very high $T \sim 10$ K. Their root-mean-square magnitudes increase with decreasing $T$, reaching $\sim 0.2 e^2/h$ at $T \lesssim 2$ K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed.

preprint2010arXiv

Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires

We have measured the quantum-interference magnetoresistances in two single indium tin oxide (ITO) nanowires between 0.25 and 40 K, by using the four-probe configuration method. The magnetoresistances are compared with the one-dimensional weak-(anti)localization theory to extract the electron dephasing length $L_ϕ$. We found, in a 60-nm diameter nanowire with a low resistivity of $ρ$(10 K) = 185 $μΩ$ cm, that $L_ϕ$ is long, increasing from 150 nm at 40 K to 520 nm at 0.25 K. Therefore, the nanowire reveals strict one-dimensional weak-localization effect up to several tens of degrees of Kelvin. In a second 72-nm diameter nanowire with a high resistivity of $ρ$(10 K) = 1030 $μΩ$ cm, the dephasing length is suppressed to $L_ϕ$(0.26 K) = 200 nm, and thus a crossover of the effective device dimensionality from one to three occurs at about 12 K. In particular, disorder-induced spin-orbit coupling is evident in the latter sample, manifesting weak-antilocalization effect at temperatures below $\sim$ 4 K. These observations demonstrate that versatile quantum-interference effects can be realized in ITO nanowires by controlling differing levels of atomic defects and impurities.