Researcher profile

Amit Jash

Amit Jash contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Coupling-decoupling of conducting topological surface states in thick Bi$_2$Se$_3$ single crystals

Sensitive ac susceptibility measurements of a topological insulator, Bi$_2$Se$_3$ single crystal, using mutual two coil inductance technique (Ref. 32) shows coupling and decoupling of high conducting surface states. The coupling of the surface states exists upto thickness of 70 microns, which is much larger than the direct coupling limit of thickness approximately 5 to 10 nanometers found in thin films. The high conducting topological surface states are coupled through the crystal via high electrically conducting channels, generated by Selenium vacancies. These conducting channels through the bulk disintegrate beyond 70 micron thickness and at high temperatures, thereby leading to decoupling of the topological surface states. We show the decoupled surface states persist upto room temperature in the topological insulator. Analysis of Nyquist plot of ac-susceptibility response of the TI using a resistor (R) Inductor (L) model shows an inductive nature of the coupling between surface states found in these Bi$_2$Se$_3$ crystals.

preprint2020arXiv

Imaging the effect of drive on the low-field vortex melting phenomenon in Ba0.6K0.4Fe2As2 single crystal

Self-field imaging of current distribution in Ba0.6K0.4Fe2As2 superconductor is used to study the effect of drive on the low-field vortex solid to liquid melting phase transformation. At low fields, the current induced drive on the vortices aids in thermally destabilizing the vortex state thereby shifting the low field melting phase boundary. We show that the current induced drive shifts solid-liquid boundaries and prepones the vortex melting phenomenon compared to the equilibrium situation. The analysis shows that for currents above 50 mA, Joule heating effects shift the melting line while below 50 mA, an effective temperature concept for driven system viz., a drive dependent shaking temperature, explains the shift. The observation of a transformation from inhomogeneous to homogeneous current flow in the sample at low fields as a function of the driving force is reconciled via an inverse dependence of the shaking temperature on vortex velocity, which is incorporated in our analysis.

preprint2020arXiv

Imaging the topological current carrying state and the surface to bulk transformation, in Bi2Se3 single crystal and thin film

Magneto-optics based current imaging technique compares the nature of topological current distribution in a single crystal and thin film of topological insulator material, Bi2Se3. The single crystal, at low temperatures, has uniform topological surface current sheets which are about 3.6 nm thick. With increasing temperature, the current partially diverts into the crystal bulk and concomitantly, the sheet break up into a patchy network of high and low current density regions. The temperature dependence of the high current density areas shows that the surface to bulk transformation in the crystal has features of classical phase transition phenomena. The surface area fraction with topological high current density behaves like an order parameter. This phase transition is driven by disorder. In Bi2Se3 thin film we show the presence of quasi one-dimensional topological edge currents which are suppressed with a weak applied magnetic field. The edge current transforms into a uniform bulk current in the film.