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Researcher profile

Allen Hsu

Allen Hsu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

4 published item(s)

preprint2014arXiv

Use of THz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas

Graphene, owing to its ability to support plasmon polariton waves in the terahertz frequency range, enables the miniaturization of antennas to allow wireless communications among nanosystems. One of the main challenges in the demonstration of graphene antennas is finding suitable terahertz sources to feed the antenna. This paper estimates the performance of a graphene RF plasmonic micro-antenna fed with a photoconductive source. The terahertz source is modeled and, by means of a full-wave EM solver, the radiated power of the device is estimated with respect to material, laser illumination and antenna geometry parameters. The results show that the proposed device radiates terahertz pulses with an average power up to 1$μ$W, proving the feasibility of feeding miniaturized graphene antennas with photoconductive materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the first time. Both digital and analog circuits are fabricated to demonstrate its capability for mixed-signal applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Integrated Circuits Based on Bilayer MoS2 Transistors

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

BN/Graphene/BN Transistors for RF Applications

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics.

0 citations0 reviewsNo code linkedOpen access