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Ali A. Orouji

Ali A. Orouji contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

A multi-objective synthesis methodology for majority/minority logic networks

New technologies such as Quantum-dot Cellular Automata (QCA), Single Electron Tunneling (SET), Tunneling Phase Logic (TPL) and all-spin logic (ASL) devices have been widely advocated in nanotechnology as a response to the physical limits associated with complementary metal oxide semiconductor (CMOS) technology in atomic scales. Some of their peculiar features are their smaller size, higher speed, higher switching frequency, lower power consumption, and higher scale integration. In these technologies, the majority (or minority) and inverter gates are employed for the production of the functions as this set of gates makes a universal set of Boolean primitives in these technologies. An important step in the generation of Boolean functions using the majority gate is reducing the number of involved gates. In this paper, a multi-objective synthesis methodology (with the objective priority of gate counts, gate levels and the number of inverter gates) is presented for finding the minimal number of possible majority gates in the synthesis of Boolean functions using the proposed Majority Specification Matrix (MSM) concept. Moreover, based on MSM, a synthesis flow is proposed for the synthesis of multi-output Boolean functions. To reveal the efficiency of the proposed method, it is compared with a meta-heuristic method, multi-objective Genetic Programing (GP). Besides, it is applied to synthesize MCNC benchmark circuits. The results are indicative of the outperformance of the proposed method in comparison to multi-objective GP method. Also, for the MCNC benchmark circuits, there is an average reduction of 10.5% in the number of levels as well as 16.8% and 33.5% in the number of majority and inverter gates, as compared to the best available method respectively.

preprint2010arXiv

Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study

This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review assesses important proposals to circumvent the leakage current problem in poly-Si TFTs and a short evaluation of strengths and weaknesses specific to each method is presented. Also, a new device structure called the Triple Gate poly-Si TFT (TG-TFT) is discussed. The key idea in the operation of this device is to make the dominant conduction mechanism in the channel to be controlled by the accumulation charge density modulation by the gate (ACMG) and not by the gate-induced grain barrier lowering (GIGBL). Using twodimensional and two-carrier device simulation, it is demonstrated that the TG-TFT exhibits a significantly diminished pseudo-subthreshold conduction leading to several orders of magnitude reduction in the OFF state leakage current when compared to a conventional poly-Si TFT. The reasons for the improved performance are explained.

preprint2010arXiv

Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm. We conclude that if the side gate length equals the main gate length, the hot electron effect diminishes optimally.