Researcher profile

Alexei Kalaboukhov

Alexei Kalaboukhov contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2026arXiv

Boosting superconductivity in ultrathin YBa$_2$Cu$_3$O$_{7-δ}$ films via nanofaceted substrates

In cuprate high-temperature superconductors the doping level is fixed during synthesis, hence the charge carrier density per CuO$_2$ plane cannot be easily tuned by conventional gating, unlike in 2D materials. Strain engineering has recently emerged as a powerful tuning knob for manipulating the properties of cuprates, in particular charge and spin orders, and their delicate interplay with superconductivity. In thin films, additional tunability can be introduced by the substrate surface morphology, particularly nanofacets formed by substrate surface reconstruction. Here we show a remarkable enhancement of the superconducting onset temperature $T_{\mathrm{c}}^{\mathrm{on}}$ and the upper critical magnetic field $H_{c,2}$ in nanometer-thin YBa$_2$Cu$_3$O$_{7-δ}$ films grown on a substrate with a nanofaceted surface. We theoretically show that the enhancement is driven by electronic nematicity and unidirectional charge density waves, where both elements are captured by an additional effective potential at the interface between the film and the uniquely textured substrate. Our findings show a new paradigm in which substrate engineering can effectively enhance the superconducting properties of cuprates. This approach opens an exciting frontier in the design and optimization of high-performance superconducting materials.

preprint2022arXiv

Mapping the phase diagram of a YBa$_2$Cu$_3$O$_{7-δ}$ nanowire through electromigration

We use electromigration (EM) to tune the oxygen content of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) nanowi\-res. During EM, the dopant oxygen atoms in the nanowire are moved under the combined effect of electrostatic force and Joule heating. The EM current can be tuned to either deplete or replenish nanowires with oxygen, allowing fine tuning of its hole doping level. Electrical transport measurements and Kelvin probe microscopy corroborate good homogeneity of the doping level along the electromigrated nanowires. Thus, EM provides an effective method to study transport properties of YBCO in a wide doping range at the nanoscale in one and the same device.

preprint2021arXiv

Gate-tunable hallmarks of unconventional superconductivity in non-centrosymmetric nanowires

Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination theoretically prefigures various forms of non-standard superconductivity. However, a convincing demonstration by phase sensitive measurements has been elusive so far. Here, by employing superconducting transport measurements in nano-devices we present clear-cut experimental evidences of unconventional superconductivity in the LaAlO3/SrTiO3 interface. The central observations are the substantial anomalous enhancement of the critical current by small magnetic fields applied perpendicularly to the plane of electron motion, and the asymmetric response with respect to the magnetic field direction. These features have a unique trend in intensity and sign upon electrostatic gating that, together with their dependence on temperature and nanowire dimensions, cannot be accommodated within a scenario of canonical spin-singlet superconductivity. We theoretically demonstrate that the hall-marks of the experimental observations unambiguously indicate a coexistence of Josephson channels with sign difference and intrinsic phase shift. The character of these findings establishes the occurrence of independent components of unconventional pairing in the superconducting state due to inversion symmetry breaking. The outcomes open new venues for the investigation of multi-orbital non-centrosymmetric superconductivity and Josephson-based devices for quantum technologies.

preprint2019arXiv

Grooved Dayem nanobridges as building blocks of high-performance YBa$_2$Cu$_3$O$_{7-δ}$ SQUID magnetometers

We present noise measurements performed on a YBa$_2$Cu$_3$O$_{7-δ}$ nanoscale weak-link-based magnetometer consisting of a Superconducting QUantum Interference Device (SQUID) galvanically coupled to a $3.5 \times 3.5~$mm$^2$ pick-up loop, reaching white flux noise levels and magnetic noise levels as low as $6~μΦ_0 / \sqrt{\mathrm{Hz}}$ and $100$~fT/$\sqrt{\mathrm{Hz}}$ at $T=77$~K, respectively. The low noise is achieved by introducing Grooved Dayem Bridges (GDBs), a new concept of weak-link. A fabrication technique has been developed for the realization of nanoscale grooved bridges, which substitutes standard Dayem bridge weak links. The introduction of these novel key blocks reduces the parasitic inductance of the weak links and increases the differential resistance of the SQUIDs. This greatly improves the device performance, thus resulting in a reduction of the white noise.

preprint2009arXiv

Quantum Resistance Standard Based on Epitaxial Graphene

We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision constitutes an improvement of four orders of magnitude over the best results obtained in exfoliated graphene and is similar to the accuracy achieved in well-established semiconductor standards. Unlike the traditional resistance standards the novel graphene device is still accurately quantized at 4.2 K, vastly simplifying practical metrology. This breakthrough was made possible by exceptional graphene quality achieved with scalable silicon carbide technology on a wafer scale and shows great promise for future large scale applications in electronics.

preprint2009arXiv

SiC Graphene Suitable For Quantum Hall Resistance Metrology

We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.