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Researcher profile

Alexandru Vlad

Alexandru Vlad contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2015arXiv

Probing graphene χ(2) using a gold photon sieve

Nonlinear second harmonic optical activity of graphene covering a gold photon sieve was determined for different polarizations. The photon sieve consists of a subwavelength gold nanohole array placed on glass. It combines the benefits of efficient light trapping and surface plasmon propagation in order to unravel different elements of graphene second-order susceptibility χ(2). Those elements efficiently contribute to second harmonic generation. In fact, the graphene- coated photon sieve produces a second harmonic intensity at least two orders of magnitude higher compared with a bare, flat gold layer and an order of magnitude coming from the plasmonic effect of the photon sieve; the remaining enhancement arises from the graphene layer itself. The measured second harmonic generation yield, supplemented by semianalytical computations, provides an original method to constrain the graphene χ(2) elements. The values obtained are |d_{31} + d_{33}| < 8.1 x 10^3 pm^2/V and |d_{15}| < 1.4 x 10^6 pm^2/V for a second harmonic signal at 780 nm. This original method can be applied to any kind of 2D materials covering such a plasmonic structure.

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preprint2014arXiv

Colloidal pattern replication through contact photolithography operated in a &#34;Talbot-Fabry-Perot&#34; regime

We detail on a continuous colloidal pattern replication by using contact photolithography. Chrome on quartz masks are fabricated using colloidal nanosphere lithography and subsequently used as photolithography stamps. Hexagonal pattern arrangements with different dimensions (980, 620 and 480 nm, using colloidal particles with respective diameters) have been studied. When the mask and the imaged resist layer were in intimate contact, a high fidelity pattern replica was obtained after photolithography exposure and processing. In turn, the presence of an air-gap in between has been found to affect the projected image onto the photoresist layer, strongly dependent on the mask feature size and air-gap height. Pattern replication, inversion and hybridization was achieved for 980 nm-period mask; no hybridization for the 620 nm; and only pattern replication for the 480 nm. These results are interpreted in the framework of a &#34;Talbot-Fabry-Perot&#34; effect. Numerical simulations corroborate with the experimental findings providing insight into the involved processes highlighting the important parameters affecting the exposure pattern. The approach allows complex subwavelength patterning and is relevant for a 3D layer-by-layer printing.

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preprint2013arXiv

Graphene-coated holey metal films: tunable molecular sensing by surface plasmon resonance

We report on the enhancement of surface plasmon resonances in a holey bidimensional grating of subwavelength size, drilled in a gold thin film coated by a graphene sheet. The enhancement originates from the coupling between charge carriers in graphene and gold surface plasmons. The main plasmon resonance peak is located around 1.5 microns. A lower constraint on the gold-induced doping concentration of graphene is specified and the interest of this architecture for molecular sensing is also highlighted.

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preprint2011arXiv

Erbium Silicide Growth in the Presence of Residual Oxygen

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.

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