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Source author record

Alexandr I. Cocemasov

Alexandr I. Cocemasov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2020arXiv

Energetic, structural and electronic features of Sn-, Ga-, O-based defect complexes in cubic In2O3

Defect energy formation, lattice distortions and electronic structure of cubic In2O3 with Sn, Ga and O impurities were theoretically investigated using density functional theory. Different types of point defects, consisting of 1 to 4 atoms of Sn, Ga and O in both substitutional and interstitial (structural vacancy) positions, were examined. It was demonstrated, that formation of substitutional Ga and Sn defects are spontaneous, while formation of interstitial defects requires an activation energy. The donor-like behavior of interstitial Ga defects with splitting of conduction band into two subbands with light and heavy electrons, respectively, was revealed. Contrarily, interstitial O defects demonstrate acceptor-like behavior with the formation of acceptor levels or subbands inside the band gap. The obtained results are important for an accurate description of transport phenomena in In2O3 with substitutional and interstitial defects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phonon Engineering of the Specific Heat of Twisted Bilayer Graphene: The Role of the Out-of-Plane Phonon Modes

We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional believe the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the frequencies as low as ~100 1/cm. This leads to the frequency-dependent ZA phonon density of states and the breakdown of the linear dependence of the specific heat on temperature T. We established that ZA phonons determine the specific heat for T<200 K while contributions from both in-plane and out-of-plane acoustic phonons are dominant for 200 K < T < 500 K. In the high-temperature limit, T>1000 K, the optical and acoustic phonons contribute approximately equally to the specific heat. The Debye temperature for graphene and twisted bilayer graphene was calculated to be around ~1861 - 1864 K. Our results suggest that the thermodynamic properties of materials such as bilayer graphene can be controlled at the atomic scale by rotation of the sp2-carbon planes.

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preprint2014arXiv

Specific Heat of Twisted Bilayer Graphene

We have studied the phonon specific heat in single-layer, bilayer and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T<15 K, specific heat varies with temperature as T^n, where n = 1 for graphene, n = 1.6 for bilayer graphene and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

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preprint2013arXiv

Phonons in Twisted Bilayer Graphene

We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and the Lennard-Jones potential for the inter-layer interactions. It was found that the stacking order affects the out-of-plane acoustic phonon modes the most. The difference in the phonon densities of states in the twisted bilayer graphene and in AA- or AB-stacked bilayer graphene appears in the phonon frequencies range 90 - 110 1/cm. Twisting bilayer graphene leads to emergence of new phonon branches - termed entangled phonons - which originate from mixing of phonon modes from different high-symmetry directions in the Brillouin zone. The frequencies of the entangled phonon depend strongly on the rotation angle and can be used for non-contact identification of the twist angles in graphene samples. The obtained results and tabulated frequencies of phonons in twisted bilayer graphene are important for interpretation of experimental Raman data and determining thermal conductivity of these materials systems.

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preprint2013arXiv

Thermal Conductivity Inhibition in Phonon Engineered Core-Shell Cross-Section Modulated Si/Ge Nanowires

We have shown theoretically that a combination of cross-section modulation and acoustic mismatch in the core-shell Si/Ge nanowires can lead to a drastic reduction of the thermal conductivity. Our calculations, which utilized two different models - five-parameter Born-von Karman and six-parameter valence-force field - for the lattice vibrations, indicate that the room temperature thermal conductivity of Si/Ge cross-section modulated nanowires is almost three orders of magnitude lower than that of bulk Si. Thermal flux in the modulated nanowires is suppressed by an order of magnitude in comparison with generic Si nanowires. The effect is explained by modification of the phonon spectra in modulated nanowires leading to decrease of the phonon group velocities and localization of certain phonon modes in narrow or wide nanowire segments. The thermal conductivity inhibition is achieved in nanowires without additional surface roughness and, thus, potentially reducing degradation of the electron transport. Our results suggest that the acoustically mismatched cross-section modulated nanowires are promising candidates for thermoelectric applications.

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