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Source author record

Alexander M. Finkel'stein

Alexander M. Finkel'stein appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.dis-nncond-mat.supr-concond-mat.str-elcond-matcond-mat.mes-hallcond-mat.mtrl-sci

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Published work

13 published item(s)

preprint2022arXiv

Control of spin waves by spatially modulated strain

We suggest using spatially modulated strain for control of a spin wave propagating inside a bulk magnet. The modulation with the wave vector $q=2k$, by virtue of magnetoelasticity, mixes spin waves with wave vectors near $k$ and $-k$. This leads to lifting the degeneracy of the symmetric and antisymmetric eigenstate combinations of these waves. The resulting picture reminds one of a tunneling particle in a symmetric double-well potential. Here, a moving spin wave being subjected to the $2k$-lattice modulation after some time alters its propagation direction to the opposite one, and so on. The effect can be utilized for the control of the spin-wave propagation that can be useful for spintronic and magnonic applications. The control may include a delay line element, filtering, and waveguide of the spin waves.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The role of electron-electron collisions for charge and heat transport at intermediate temperatures

Electric, thermal and thermoelectric transport in correlated electron systems probe different aspects of the many-body dynamics, and thus provide complementary information. These are well studied in the low- and high-temperature limits, while the experimentally important intermediate regime, in which elastic and inelastic scattering are both important, is less understood. To fill this gap, we provide comprehensive solutions of the Boltzmann equation in the presence of an electric field and a temperature gradient for two different cases: First, when electron-electron collisions are treated within the relaxation-time approximation while the full momentum dependence of electron-impurity scattering is included and, second, when the electron-impurity scattering is momentum-independent, but the electron-electron collisions give rise to a momentum-dependent inelastic scattering rate of the Fermi-liquid type. We find that for Fermi-liquid as well as for Coulomb interactions, both methods give the same results for the leading temperature dependence of the transport coefficients. Moreover, the inelastic relaxation rate enters the electric conductivity and the Seebeck coefficient only when the momentum dependence of the electron-impurity collisions, analytical or non-analytical, is included. Specifically, we show that inelastic processes only mildly affect the electric conductivity, but can generate a non-monotonic dependence of the Seebeck coefficient on temperature and even a change of sign. Thermal conductivity, by contrast, always depends on the inelastic scattering rate even for a constant elastic relaxation rate.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dephasing time in graphene due to interaction with flexural phonons

We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite special because there is a large interval of temperature where the dephasing induced by phonons can not be obtain using the golden rule. We evaluate this rate for a wide range of density ($n$) and temperature ($T$) and determine several asymptotic regions with temperature dependence crossing over from $τ_{ϕ}^{-1}\sim T^{2}$ to $τ_ϕ^{-1}\sim T$ when temperature increases. We also find $τ_ϕ^{-1}$ to be a non-monotonous function of $n$. These distinctive features of the new contribution can provide an effective way to identify flexural phonons in graphene through the electronic transport by measuring the weak localization corrections in magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fluctuation conductivity in disordered superconducting films

We study the effect of superconducting fluctuations on the longitudinal and the transverse (Hall) conductivity in homogeneously disordered films. Our calculation is based on the Usadel equation in the real-time formulation. We adjust this approach to derive analytic expressions for the fluctuation corrections in the entire metallic part of the temperature-magnetic field phase diagram, including the effects of both classical and quantum fluctuations. This method allows us to obtain fluctuation corrections in a compact and effective way, establishing a direct connection between phenomenological and microscopic calculations.

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preprint2012arXiv

Hall conductivity dominated by fluctuations near the superconducting transition in disordered films

We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields well above the upper critical field, $\text{\text{H}}_{c2}(0)$. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time dependent Ginzburg-Landau theory.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Hall Effect in Superconducting Films

Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a broader range of temperatures and magnetic fields, including the vicinity of the magnetic field induced quantum critical point. In the process, we found a new contribution to the Hall conductivity that was not considered before. Recently, our theory has been used to fit measurements of the Hall resistance in amorphous TaN films.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Fluctuations of the superconducting order parameter as an origin of the Nernst effect

We show that the strong Nernst signal observed recently in amorphous superconducting films far above the critical temperature is caused by the fluctuations of the superconducting order parameter. We demonstrate a striking agreement between our theoretical calculations and the experimental data at various temperatures and magnetic fields. Besides, the Nernst effect is interesting not only in the context of superconductivity. We discuss some subtle issues in the theoretical study of thermal phenomena that we have encountered while calculating the Nernst coefficient. In particular, we explain how the Nernst theorem (the third law of thermodynamics) imposes a strict constraint on the magnitude of the Nernst effect.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quantum kinetic approach for studying thermal transport in the presence of electron-electron interactions and disorder

A user friendly scheme based on the quantum kinetic equation is developed for studying thermal transport phenomena in the presence of interactions and disorder. We demonstrate that this scheme is suitable for both a systematic perturbative calculation as well as a general analysis. We believe that we present an adequate alternative to the Kubo formula, which for the thermal transport is rather cumbersome.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quantum kinetic approach to the calculation of the Nernst effect

We show that the strong Nernst effect observed recently in amorphous superconducting films far above the critical temperature is caused by the fluctuations of the superconducting order parameter. We employ the quantum kinetic approach for the derivation of the Nernst coefficient. We present here the main steps of the calculation and discuss some subtle issues that we encountered while calculating the Nernst coefficient. In particular, we demonstrate that in the limit T=0 the contribution of the magnetization ensures the vanishing of the Nernst signal in accordance with the third law of thermodynamics. We obtained a striking agreement between our theoretical calculations and the experimental data in a broad region of temperatures and magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Spin relaxation in the presence of electron-electron interactions

The D'yakonov-Perel' spin relaxation induced by the spin-orbit interaction is examined in disordered two-dimensional electron gas. It is shown that, because of the electron-electron interactions different spin relaxation rates can be obtained depending on the techniques used to extract them. It is demonstrated that the relaxation rate of a spin population is proportional to the spin-diffusion constant D_s, while the spin-orbit scattering rate controlling the weak-localization corrections is proportional to the diffusion constant D, i.e., the conductivity. The two diffusion constants get strongly renormalized by the electron-electron interactions, but in different ways. As a result, the corresponding relaxation rates are different, with the difference between the two being especially strong near a magnetic instability or near the metal-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Dilute electron gas near the metal-insulator transition in two dimensions

In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or, alternatively, the existence of a metal-insulator transition in the presence of strong electron-electron interactions in two dimensions. We argue that under the extreme conditions of ultra clean systems not only is the electron-electron interaction very strong but the role of other system specific properties are also enhanced. In particular, we emphasize the role of valleys in determining the transport properties of the dilute electron gas in silicon inversion layers (Si-MOSFETs). It is shown that for a high quality sample the temperature behavior of the resistivity in the region close to the critical region of the metal-insulator transition is well described by a renormalization group analysis of the interplay of interaction and disorder if the electron band is assumed to have two distinct valleys. The decrease in the resistivity up to five times has been captured in the correct temperature interval by this analysis, without involving any adjustable parameters. The considerable variance in the data obtained from different Si-MOSFET samples is attributed to the sample dependent scattering rate across the two valleys, presenting thereby with a possible explanation for the absence of universal behavior in Si-MOSFET samples of different quality.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Inter-Edge interaction in the Quantum Hall Effect

We consider effects of the interaction between electrons drifting along the opposite sides of a narrow sample under the conditions of the quantum Hall effect. A spatial variation of this interaction leads to backward scattering of collective excitations propagating along the edges. Experiments on propagation of the edge modes in samples with constrictions may give information about the strength of the inter-edge electron interaction in the quantum Hall regime.

0 citations0 reviewsNo code linkedOpen access