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Researcher profile

Alexander I. Tartakovskii

Alexander I. Tartakovskii contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-phphysics.optics

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Published work

3 published item(s)

preprint2026arXiv

Magnetic switching of exciton lifetime in CrSBr

Exciton dynamics in layered magnetic semiconductors provide a sensitive probe of the interplay between spin order and light-matter interaction. Here, we study thin CrSBr layers using time-resolved photoluminescence spectroscopy in an external magnetic field, revealing a step-like reduction in the exciton lifetime from 11 to 7 ps, during the magnetization flip from the antiferromagnetic to the ferromagnetic phase. The reduction of the exciton lifetime in the ferromagnetic phase persists below the Néel temperature, as evidenced by its strong magnetic-field dependence that disappears in the paramagnetic phase. Ab initio calculations reveal a one-dimensional nature of free excitons accompanied by a pronounced change in the oscillator strength across the magnetic phase transition predicting a shorter radiative lifetime of free excitons in the antiferromagnetic phase of CrSBr contradicting the experimental observations. This discrepancy is explained by strong localization of excitons at low tempature. We show both experimentally and theoretically that the observed magnetic switching of the exciton lifetime is attributed to a larger exciton localization volume leading to a larger oscillator strength in the ferromagnetic phase. The results show that disorder-induced localization effects play a key role in exciton dynamics in CrSBr.

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preprint2024arXiv

Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe$_3$ observed through Raman spectroscopy

Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom providing new insights for developing fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorous triselenide (MnPSe$_3$). We observe a nonlinear temperature dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the N{é}el temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants.

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preprint2020arXiv

Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition

Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities comprising large area transition metal dichalcogenide / hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide / hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.

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