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Alexander I. Tartakovskii

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other physics.app-ph physics.optics quant-ph

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preprint2026arXiv

Magnetic switching of exciton lifetime in CrSBr

Exciton dynamics in layered magnetic semiconductors provide a sensitive probe of the interplay between spin order and light-matter interaction. Here, we study thin CrSBr layers using time-resolved photoluminescence spectroscopy in an external magnetic field, revealing a step-like reduction in the exciton lifetime from 11 to 7 ps, during the magnetization flip from the antiferromagnetic to the ferromagnetic phase. The reduction of the exciton lifetime in the ferromagnetic phase persists below the Néel temperature, as evidenced by its strong magnetic-field dependence that disappears in the paramagnetic phase. Ab initio calculations reveal a one-dimensional nature of free excitons accompanied by a pronounced change in the oscillator strength across the magnetic phase transition predicting a shorter radiative lifetime of free excitons in the antiferromagnetic phase of CrSBr contradicting the experimental observations. This discrepancy is explained by strong localization of excitons at low tempature. We show both experimentally and theoretically that the observed magnetic switching of the exciton lifetime is attributed to a larger exciton localization volume leading to a larger oscillator strength in the ferromagnetic phase. The results show that disorder-induced localization effects play a key role in exciton dynamics in CrSBr.

preprint2024arXiv

Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe$_3$ observed through Raman spectroscopy

Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom providing new insights for developing fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorous triselenide (MnPSe$_3$). We observe a nonlinear temperature dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the N{é}el temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants.

preprint2020arXiv

Strong Exciton-Photon Coupling in Large Area MoSe$_2$ and WSe$_2$ Heterostructures Fabricated from Two-Dimensional Materials Grown by Chemical Vapor Deposition

Two-dimensional semiconducting transition metal dichalcogenides embedded in optical microcavities in the strong exciton-photon coupling regime may lead to promising applications in spin and valley addressable polaritonic logic gates and circuits. One significant obstacle for their realization is the inherent lack of scalability associated with the mechanical exfoliation commonly used for fabrication of two-dimensional materials and their heterostructures. Chemical vapor deposition offers an alternative scalable fabrication method for both monolayer semiconductors and other two-dimensional materials, such as hexagonal boron nitride. Observation of the strong light-matter coupling in chemical vapor grown transition metal dichalcogenides has been demonstrated so far in a handful of experiments with monolayer molybdenum disulfide and tungsten disulfide. Here we instead demonstrate the strong exciton-photon coupling in microcavities comprising large area transition metal dichalcogenide / hexagonal boron nitride heterostructures made from chemical vapor deposition grown molybdenum diselenide and tungsten diselenide encapsulated on one or both sides in continuous few-layer boron nitride films also grown by chemical vapor deposition. These transition metal dichalcogenide / hexagonal boron nitride heterostructures show high optical quality comparable with mechanically exfoliated samples, allowing operation in the strong coupling regime in a wide range of temperatures down to 4 Kelvin in tunable and monolithic microcavities, and demonstrating the possibility to successfully develop large area transition metal dichalcogenide based polariton devices.

preprint2015arXiv

Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots

GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron $g$-factor ($g_e<0.05$), providing a route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to $60\%$ achieved. NMR spectroscopy reveals the structure of two types of quantum dots and yields the small magnitude of residual strain $ε_b<0.02\%$ which nevertheless leads to long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclear spin environment is advantageous for applications in quantum information processing.

preprint2014arXiv

All-optical formation of coherent dark states of silicon-vacancy spins in diamond

Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.

preprint2012arXiv

III-V quantum light source and cavity-QED on Silicon

Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica waveguide circuits have been used to demonstrate linear optical quantum computing. Scale-up requires miniaturisation of the waveguide circuit and multiple photon sources. Silicon photonics, driven by the incentive of optical interconnects, is a highly promising platform for the passive components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

preprint2011arXiv

Stark Spectroscopy and Radiative Lifetimes in Single Self-Assembled CdTe Quantum Dots

We present studies on Coulomb interactions in single self-assembled CdTe quantum dots. We use a field effect structure to tune the charge state of the dot and investigate the impact of the charge state on carrier wave functions. The analysis of the quantum confined Stark shifts of four excitonic complexes allows us to conclude that the hole wave function is softer than electron wave function, i. e. it is subject to stronger modifications upon changing of the dot charge state. These conclusions are corroborated by time-resolved photoluminescence studies of recombination lifetimes of different excitonic complexes. We find that the lifetimes are notably shorter than expected for strong confinement and result from a relatively shallow potential in the valence band. This weak confinement facilitates strong hole wave function redistributions. We analyze spectroscopic shifts of the observed excitonic complexes and find the same sequence of transitions for all studied dots. We conclude that the universality of spectroscopic shifts is due to the role of Coulomb correlations stemming from strong configuration mixing in the valence band.