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Source author record

Alexander A. Khajetoorians

Alexander A. Khajetoorians appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mechcond-mat.str-elcond-mat.dis-nn

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Published work

14 published item(s)

preprint2022arXiv

Gating orbital memory with an atomic donor

Orbital memory is defined by two stable valencies that can be electrically switched and read-out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus. Using low temperature scanning tunneling microscopy/spectroscopy, we characterized the electronic properties of individual Cu donors, corroborating this behavior with ab initio calculations based on density functional theory. We studied the influence of an individual donor on the charging energy and stochastic behavior of an individual Co atom. We found a strong impact on the state favorability in the stochastic limit. These findings provide quantitative information about the influence of local electric fields on atomic orbital memory.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Orbital memory from individual Fe atoms on black phosphorus

Bistable valency in individual atoms presents a new approach toward single-atom memory, as well as a building block to create tunable and stochastic multi-well energy landscapes. Yet, this concept of orbital memory has thus far only been observed for cobalt atoms on the surface of black phosphorus, which are switched using tip-induced ionization. Here, we show that individual iron atoms on the surface of black phosphorus exhibit orbital memory using a combination of scanning tunneling microscopy and spectroscopy with ab initio calculations based on density functional theory. Unlike cobalt, the iron orbital memory can be switched in its non-ionized ground state. Based on calculations, we confirm that each iron valency has a distinct magnetic moment that is characterized by a distinguishable charge distribution due to the different orbital population. By studying the stochastic switching of the valency with varying tunneling conditions, we propose that the switching mechanism is based on a two-electron tunneling process.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermally-induced magnetic order from glassiness in elemental neodymium

Temperature in thermodynamics is synonymous with disorder, and responsible for ultimately destroying ordered phases. Here, we show an unusual magnetic transition where, with increasing the temperature of elemental neodymium, long-range multi-Q magnetic order emerges from a self-induced spin glass. Using temperature-dependent spin-polarized scanning tunneling microscopy, we characterize the local Q order in the spin-Q glass phase and quantify the emergence of long-range multi-Q order with increasing temperature. We develop two distinct analysis tools, which enable the quantification of the glass transition temperature, based on measured spatially-dependent magnetization. We compare these observations with atomic spin dynamics simulations, which reproduce the qualitative observation of a phase transition from a low-temperature spin glass phase to an intermediate ordered multi-Q phase. These simulations trace the origin of the unexpected high temperature order in weakened frustration driven by temperature-dependent sublattice correlations. These findings constitute an example of order from disorder and provide a rich platform to study magnetization dynamics in a self-induced spin glass.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantifying Exchange Forces of a Non-Collinear Magnetic Structure on the Atomic Scale

The large interest in chiral magnetic structures for realization of nanoscale magnetic storage or logic devices has necessitated methods which can quantify magnetic interactions at the atomic scale. To overcome the limitations of the typically used current-based sensing of atomic-scale exchange interactions, a force-based detection scheme is highly advantageous. Here, we quantify the atomic-scale exchange force field between a ferromagnetic tip and a cycloidal spin spiral using our developed combination of current and exchange force detection. Compared to the surprisingly weak spin polarization, the exchange force field is more sensitive to atomic-scale variations in the magnetization. First-principles calculations reveal that the measured atomic-scale variations in the exchange force originate from different contributions of direct and indirect (Zener) type exchange mechanisms, depending on the chemical tip termination. Our work opens the perspective of quantifying different exchange mechanisms of chiral magnetic structures with atomic-scale precision using 3D magnetic exchange force field measurements.

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preprint2020arXiv

Self-induced spin glass state in elemental and crystalline neodymium

Spin glasses are a highly complex magnetic state of matter, intricately linked to spin frustration and structural disorder. They exhibit no long-range order and exude aging phenomena, distinguishing them from quantum spin liquids. We report a new type of spin glass state, the spin-Q glass, observable in bulk-like crystalline metallic neodymium thick films. Using spin-polarized scanning tunneling microscopy combined with ab initio calculations and atomistic spin-dynamics simulations, we visualize the variations in atomic-scale non-collinear order and its response to magnetic field and temperature. We quantify the aging phenomena relating the glassiness to crystalline symmetry and the energy landscape. This result not only resolves the long-standing debate of the magnetism of neodymium, but also suggests that glassiness may arise in other magnetic solids lacking extrinsic disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atom-by-atom construction of attractors in a tunable finite size spin array

We demonstrate that a two-dimensional finite and periodic array of Ising spins coupled via RKKY-like exchange can exhibit tunable magnetic states ranging from three distinct magnetic regimes: (1) a conventional ferromagnetic regime, (2) a glass-like regime, and (3) a new multi-well regime. These magnetic regimes can be tuned by one gate-like parameter, namely the ratio between the lattice constant and the oscillating interaction wavelength. We characterize the various magnetic regimes, quantifying the distribution of low energy states, aging relaxation dynamics, and scaling behavior. The glassy and multi-well behavior results from the competing character of the oscillating long-range exchange interactions. The multi-well structure features multiple attractors, each with a sizable basin of attraction. This may open the possible application of such atomic arrays as associative memories.

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preprint2019arXiv

Designer quantum states of matter created atom-by-atom

With the advances in high resolution and spin-resolved scanning tunneling microscopy as well as atomic-scale manipulation, it has become possible to create and characterize quantum states of matter bottom-up, atom-by-atom. This is largely based on controlling the particle- or wave-like nature of electrons, as well as the interactions between spins, electrons, and orbitals and their interplay with structure and dimensionality. We review the recent advances in creating artificial electronic and spin lattices that lead to various exotic quantum phases of matter, ranging from topological Dirac dispersion to complex magnetic order. We also project future perspectives in non-equilibrium dynamics, prototype technologies, engineered quantum phase transitions and topology, as well as the evolution of complexity from simplicity in this newly developing field.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates

We demonstrate how hybridization between a two-dimensional material and its substrate can lead to an apparent heavy doping, using the example of monolayer TaS$_2$ grown on Au(111). Combining $\textit{ab-initio}$ calculations, scanning tunneling spectroscopy experiments and a generic model, we show that strong changes in Fermi areas can arise with much smaller actual charge transfer. This mechanism, which we refer to as pseudodoping, is a generic effect for metallic two-dimensional materials which are either adsorbed to metallic substrates or embedded in vertical heterostructures. It explains the apparent heavy doping of TaS$_2$ on Au(111) observed in photoemission spectroscopy and spectroscopic signatures in scanning tunneling spectroscopy. Pseudodoping is associated with non-linear energy-dependent shifts of electronic spectra, which our scanning tunneling spectroscopy experiments reveal for clean and defective TaS$_2$ monolayer on Au(111). The influence of pseudodoping on the formation of charge ordered, magnetic, or superconducting states is analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Band gap engineering by Bi intercalation of graphene on Ir(111)

We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling microscopy (STM) reveals a hexagonal surface structure and a dislocation network upon Bi intercalation, which we attribute to a $\sqrt{3}\times\sqrt{3}R30°$ Bi structure on the underlying Ir(111) surface. Ab-initio calculations show that this Bi structure is the most energetically favorable, and also illustrate that STM measurements are most sensitive to C atoms in close proximity to intercalated Bi atoms. Additionally, Bi intercalation induces a band gap ($E_g=0.42\,$eV) at the Dirac point of graphene and an overall n-doping ($\sim 0.39\,$eV), as seen in angular-resolved photoemission spectroscopy. We attribute the emergence of the band gap to the dislocation network which forms favorably along certain parts of the moiré structure induced by the graphene/Ir(111) interface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Crystalline and electronic structure of single-layer TaS$_2$

Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K.

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preprint2016arXiv

Single-layer MoS$_2$ on Au(111): band gap renormalization and substrate interaction

The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$, the valence band maximum has a significantly higher binding energy than in the free MoS$_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS$_2$ orbitals with the substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Response of the topological surface state to surface disorder in TlBiSe$_2$

Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands can not be re- garded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as a direct evidence of its topological self-protection and shows the robust nature of the Dirac cone like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Analysis of the inelastic contribution to atomic spin excitation spectroscopy

We investigate the dependence of the inelastic spin excitation contribution to scanning tunneling spectroscopy recorded above Fe adsorbates on the InSb(110) surface at subkelvin temperatures, on bulk doping and tunnel junction resistance. To explain our observations, we show how the inelastic contribution depends on the parameters describing the excitation mechanism and tunnel conditions, in the framework of a recently developed model. We conclude that in this particular system of an adsorbate which is strongly relaxed into the substrate, the tip-sample distance dependent by-tunneling has to be taken into account in order to explain the observed variations in the inelastic tunnel spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Visualizing Quantum Well State Perturbations of Metallic Thin Films near Stacking Fault Defects

We demonstrate that quantum well states (QWS) of thin Pb films are highly perturbed within the proximity of intrinsic film defects. Scanning Tunneling Spectroscopy (STM/STS) measurements indicate that the energy of these states have a strong distance dependence within 4 nm of the defect with the strongest energetic fluctuations equaling up to 100 meV. These localized perturbations show large spatially-dependent asymmetries in the LDOS around the defect site for each corresponding quantum well state. These energetic fluctuations can be described by a simple model which accounts for fluctuations in the confinement potential induced by topographic changes.

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