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Alexander A. Green

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Published work

2 published item(s)

preprint2020arXiv

Exfoliation of Two-Dimensional Nanosheets of Metal Diborides

The metal diborides are a class of ceramic materials with crystal structures consisting of hexagonal sheets of boron atoms alternating with planes of metal atoms held together with mixed character ionic/covalent bonds. Many of the metal diborides are ultrahigh temperature ceramics like HfB$_2$, TaB$_2$, and ZrB$_2$, which have melting points above 3000$^\circ$C, high mechanical hardness and strength at high temperatures, and high chemical resistance, while MgB$_2$ is a superconductor with a transition temperature of 39 K. Here we demonstrate that this diverse family of non-van der Waals materials can be processed into stable dispersions of two-dimensional (2D) nanosheets using ultrasonication-assisted exfoliation. We generate 2D nanosheets of the metal diborides AlB$_2$, CrB$_2$, HfB$_2$, MgB$_2$, NbB$_2$, TaB$_2$, TiB$_2$, and ZrB$_2$, and use electron and scanning probe microscopies to characterize their structures, morphologies, and compositions. The exfoliated layers span up to micrometers in lateral dimension and reach thicknesses down to 2-3 nm, while retaining their hexagonal atomic structure and chemical composition. We exploit the convenient solution-phase dispersions of exfoliated CrB$_2$ nanosheets to incorporate them directly into polymer composites. In contrast to the hard and brittle bulk CrB$_2$, we find that CrB$_2$ nanocomposites remain very flexible and simultaneously provide increases in the elastic modulus and the ultimate tensile strength of the polymer. The successful liquid-phase production of 2D metal diborides enables their processing using scalable low-temperature solution-phase methods, extending their use to previously unexplored applications, and reveals a new family of non-van der Waals materials that can be efficiently exfoliated into 2D forms.

preprint2012arXiv

High-frequency performance of scaled carbon nanotube array field-effect transistors

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.