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Researcher profile

Alexander A. Demkov

Alexander A. Demkov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2013arXiv

Efficient variational approach to the impurity problem and its application to the dynamical mean-field theory

Within the framework of exact diagonalization (ED), we compute the ground state of Anderson impurity problem using the variational approach based on the configuration interaction (CI) expansion. We demonstrate that an accurate ground state can be obtained by iteratively diagonalizing a matrix with the dimension that is less than 10$%$ of the full Hamiltonian. The efficiency of the CI expansion for different problems is analyzed. By way of example, we apply this method to the single-site dynamical mean field theory using ED as the impurity solver. Specifically, to demonstrate the usefulness of this approach, we solve the attractive Hubbard model in the grand-canonical ensemble, where the s-wave superconducting solution is explicitly obtained.

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preprint2013arXiv

Electron Correlation in Oxygen Vacancy in SrTiO$_3$

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO$_3$ they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy is widely reported. To explain this inconsistency we investigate the effect of electron correlation in an oxygen vacancy (OV) in SrTiO$_3$. When taking correlation into account, we find that the OV-induced localized level can at most trap one electron, while the second electron occupies the conduction band. Our results offer a natural explanation of how the OV in SrTiO$_3$ can produce a deep in-gap level (about 1 eV below the conduction band bottom) in photoemission, and at the same time be an electron donor. Our analysis implies an OV in SrTiO$_3$ should be fundamentally regarded as a magnetic impurity, whose deep level is always partially occupied due to the strong Coulomb repulsion. An OV-based Anderson impurity model is derived, and its implications are discussed.

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preprint2013arXiv

Lattice distortion effects on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction

We theoretically investigate the influence of internal and external strain on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction. At the Hartree-Fock level, topological phases originate from an interaction-generated effective spin-orbit coupling that opens a gap in the band structure. For the unstrained system, there is a quadratic band touching at the $Γ$ point at the Fermi energy for unpolarized electrons and Dirac points at K, K$'$ at the Fermi energy for fully polarized electrons. Using density functional theory we show that the quadratic band touching and Dirac points are remarkably stable to internal strain-induced out-of-plane distortions and rotations of the oxygen octahedra, which we compute. The lack of a gap opening from internal strain implies a robustness to the mean-field predicted topological phases for both the polarized and unpolarized systems. We also consider an external strain imposed along the [001] cubic direction and show this can open a gap at the $Γ$ point but leaves the Dirac points intact. Finally, we compute a phase diagram for parameters relevant to LaNiO$_3$ which shows that strain favors a phase with polarized orbitals and antiferromagnetic spin order, but leaves earlier predictions for a zero-magnetic field topological quantum Hall state essentially unchanged. Taken together, our results suggest that the [111] growth direction in perovskites may lead to thin films that are relatively immune to distortion effects compared to those grown along [001].

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preprint2012arXiv

Electronic structure of (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along [111]

The electronic structure of a LaNiO$_3$ bilayer grown along the [111] direction and confined between insulating layers of LaAlO$_3$ is theoretically investigated using a combination of first principle calculations and effective multi-orbital lattice models. The LDA band structure is well reproduced by a tight-binding model for the Ni-$e_g$ orbitals defined on the buckled honeycomb lattice. We highlight peculiar properties of this model which include almost flat bands as well as linear and quadratic band crossing points. The effect of local correlations is discussed within the LDA$+U$ scheme and within the Hartree-Fock approximation for interacting multi-orbital lattice models. Over a wide range of interaction parameters we find that a ferromagnetic phase is energetically favored. We discuss the possibility of additional orbital order which could stabilize a spontaneous Chern insulator with chiral edge modes or a staggered orbital phase with a $\sqrt{3}\times\sqrt{3}$ reconstruction of the unit cell. By studying an interacting nickel-oxygen lattice model we find that the stability of these orbitally ordered phases also depends on the value of the charge-transfer energy. Controlling the charge-transfer energy might therefore be an important step towards engineering exotic electronic phases in certain classes of oxide heterostructures.

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preprint2009arXiv

Interfacial Magnetoelectric Coupling in Tri-component Superlattices

Using first-principles density functional theory, we investigate the interfacial magnetoelectric coupling in a tri-component superlattice composed of a ferromagnetic metal (FM), ferroelectric (FE), and normal metal (NM). Using Fe/FE/Pt as a model system, we show that a net and cumulative interfacial magnetization is induced in the FM metal near the FM/FE interface. A carefully analysis of the magnetic moments in Fe reveals that the interfacial magnetization is a consequence of a complex interplay of interfacial charge transfer, chemical bonding, and spin dependent electrostatic screening. The last effect is linear in the FE polarization, is switchable upon its reversal, and yields a substantial interfacial magnetoelectric coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin-Filtering Multiferroic-Semiconductor Heterojunctions

We report on the structural and electronic properties of the interface between the multiferoic oxide YMnO$_3$ and wide band-gap semiconductor GaN studied with the Hubbard-corrected local spin density approximation (LSDA+U) to density-functional theory (DFT). We find that the band offsets at the interface between antiferromagnetically ordered YMnO$_3$ and GaN are different for spin-up and spin-down states. This behavior is due to the spin splitting of the valence band induced by the interface. The energy barrier depends on the relative orientation of the electric polarization with respect to the polarization direction of the GaN substrate suggesting an opportunity to create magnetic tunnel junctions in this materials system.

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