Source author record

Alexander A. Demkov

Alexander A. Demkov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

8works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2015arXiv

Final-state effect on x-ray photoelectron spectrum of nominally $d^1$ and $n$-doped $d^0$ transition metal oxides

We investigate the x-ray photoelectron spectroscopy (XPS) of nominally $d^1$ and $n$-doped $d^0$ transition metal oxides including NbO$_2$, SrVO$_3$, and LaTiO$_3$ (nominally $d^1$), as well as $n$-doped SrTiO$_3$ (nominally $d^0$). In the case of single phase $d^1$ oxides, we find that the XPS spectra (specifically photoelectrons from Nb $3d$, V $2p$, Ti $2p$ core levels) all display at least two, and sometimes three distinct components, which can be consistently identified as $d^0$, $d^1$, and $d^2$ oxidation states (with decreasing order in binding energy). Electron doping increases the $d^2$ component but decreases the $d^0$ component, whereas hole doping reverses this trend; a single $d^1$ peak is never observed, and the $d^0$ peak is always present even in phase-pure samples. In the case of $n$-doped SrTiO$_3$, the $d^1$ component appears as a weak shoulder with respect to the main $d^0$ peak. We argue that these multiple peaks should be understood as being due to the final-state effect and are intrinsic to the materials. Their presence does not necessarily imply the existence of spatially localized ions of different oxidation states nor of separate phases. A simple model is provided to illustrate this interpretation, and several experiments are discussed accordingly. The key parameter to determine the relative importance between the initial-state and final-state effects is also pointed out.

preprint2015arXiv

Quench dynamics of Anderson impurity model using configuration interaction method

We study the quench dynamics of an Anderson impurity model using the configuration interaction (CI) method. In particular, we focus on the relaxation behavior of the impurity occupation. The system is found to behave very differently in the weak-coupling and strong-coupling regimes. In the weak-coupling regime, the impurity occupation relaxes to a time-independent constant quickly after only a few oscillations. In the strong-coupling regime, the impurity occupation develops a fast oscillation, with a much slower relaxation. We show that it is the multi-peak structure in the many-body energy spectrum that separates these two regimes. The characteristic behavior, including the power-law decay and the period of oscillation, can also be related to certain features in the many-body energy spectrum. The respective advantages of several impurity solvers are discussed, and the convergence of different CI truncation schemes is provided.

preprint2013arXiv

Efficient variational approach to the impurity problem and its application to the dynamical mean-field theory

Within the framework of exact diagonalization (ED), we compute the ground state of Anderson impurity problem using the variational approach based on the configuration interaction (CI) expansion. We demonstrate that an accurate ground state can be obtained by iteratively diagonalizing a matrix with the dimension that is less than 10$%$ of the full Hamiltonian. The efficiency of the CI expansion for different problems is analyzed. By way of example, we apply this method to the single-site dynamical mean field theory using ED as the impurity solver. Specifically, to demonstrate the usefulness of this approach, we solve the attractive Hubbard model in the grand-canonical ensemble, where the s-wave superconducting solution is explicitly obtained.

preprint2013arXiv

Electron Correlation in Oxygen Vacancy in SrTiO$_3$

Oxygen vacancies are an important type of defect in transition metal oxides. In SrTiO$_3$ they are believed to be the main donors in an otherwise intrinsic crystal. At the same time, a relatively deep gap state associated with the vacancy is widely reported. To explain this inconsistency we investigate the effect of electron correlation in an oxygen vacancy (OV) in SrTiO$_3$. When taking correlation into account, we find that the OV-induced localized level can at most trap one electron, while the second electron occupies the conduction band. Our results offer a natural explanation of how the OV in SrTiO$_3$ can produce a deep in-gap level (about 1 eV below the conduction band bottom) in photoemission, and at the same time be an electron donor. Our analysis implies an OV in SrTiO$_3$ should be fundamentally regarded as a magnetic impurity, whose deep level is always partially occupied due to the strong Coulomb repulsion. An OV-based Anderson impurity model is derived, and its implications are discussed.

preprint2013arXiv

Lattice distortion effects on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction

We theoretically investigate the influence of internal and external strain on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction. At the Hartree-Fock level, topological phases originate from an interaction-generated effective spin-orbit coupling that opens a gap in the band structure. For the unstrained system, there is a quadratic band touching at the $Γ$ point at the Fermi energy for unpolarized electrons and Dirac points at K, K$'$ at the Fermi energy for fully polarized electrons. Using density functional theory we show that the quadratic band touching and Dirac points are remarkably stable to internal strain-induced out-of-plane distortions and rotations of the oxygen octahedra, which we compute. The lack of a gap opening from internal strain implies a robustness to the mean-field predicted topological phases for both the polarized and unpolarized systems. We also consider an external strain imposed along the [001] cubic direction and show this can open a gap at the $Γ$ point but leaves the Dirac points intact. Finally, we compute a phase diagram for parameters relevant to LaNiO$_3$ which shows that strain favors a phase with polarized orbitals and antiferromagnetic spin order, but leaves earlier predictions for a zero-magnetic field topological quantum Hall state essentially unchanged. Taken together, our results suggest that the [111] growth direction in perovskites may lead to thin films that are relatively immune to distortion effects compared to those grown along [001].

preprint2012arXiv

Electronic structure of (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along [111]

The electronic structure of a LaNiO$_3$ bilayer grown along the [111] direction and confined between insulating layers of LaAlO$_3$ is theoretically investigated using a combination of first principle calculations and effective multi-orbital lattice models. The LDA band structure is well reproduced by a tight-binding model for the Ni-$e_g$ orbitals defined on the buckled honeycomb lattice. We highlight peculiar properties of this model which include almost flat bands as well as linear and quadratic band crossing points. The effect of local correlations is discussed within the LDA$+U$ scheme and within the Hartree-Fock approximation for interacting multi-orbital lattice models. Over a wide range of interaction parameters we find that a ferromagnetic phase is energetically favored. We discuss the possibility of additional orbital order which could stabilize a spontaneous Chern insulator with chiral edge modes or a staggered orbital phase with a $\sqrt{3}\times\sqrt{3}$ reconstruction of the unit cell. By studying an interacting nickel-oxygen lattice model we find that the stability of these orbitally ordered phases also depends on the value of the charge-transfer energy. Controlling the charge-transfer energy might therefore be an important step towards engineering exotic electronic phases in certain classes of oxide heterostructures.

preprint2009arXiv

Interfacial Magnetoelectric Coupling in Tri-component Superlattices

Using first-principles density functional theory, we investigate the interfacial magnetoelectric coupling in a tri-component superlattice composed of a ferromagnetic metal (FM), ferroelectric (FE), and normal metal (NM). Using Fe/FE/Pt as a model system, we show that a net and cumulative interfacial magnetization is induced in the FM metal near the FM/FE interface. A carefully analysis of the magnetic moments in Fe reveals that the interfacial magnetization is a consequence of a complex interplay of interfacial charge transfer, chemical bonding, and spin dependent electrostatic screening. The last effect is linear in the FE polarization, is switchable upon its reversal, and yields a substantial interfacial magnetoelectric coupling.

preprint2007arXiv

Spin-Filtering Multiferroic-Semiconductor Heterojunctions

We report on the structural and electronic properties of the interface between the multiferoic oxide YMnO$_3$ and wide band-gap semiconductor GaN studied with the Hubbard-corrected local spin density approximation (LSDA+U) to density-functional theory (DFT). We find that the band offsets at the interface between antiferromagnetically ordered YMnO$_3$ and GaN are different for spin-up and spin-down states. This behavior is due to the spin splitting of the valence band induced by the interface. The energy barrier depends on the relative orientation of the electric polarization with respect to the polarization direction of the GaN substrate suggesting an opportunity to create magnetic tunnel junctions in this materials system.