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Alejandro V. Silhanek

Alejandro V. Silhanek contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Cuprate high-temperature superconductors, such as Yttrium Barium Copper Oxide (YBCO), are extremely promising for emerging technologies such as low-power computing, data storage, quantum sensors and superconducting electronics. However, the realization of high-performance functional nanostructures presents formidable challenges due to the difficulty of applying conventional nanofabrication methods to such sensitive materials, making the search for alternative methods a key enabling factor. Since YBCO's superconducting and normal-state properties are highly dependent on oxygen stoichiometry, precise nanoscale control of the oxygen content represents a highly appealing approach for creating advanced nanoengineered devices. In this work, we demonstrate the precise fabrication of sub-micrometer, grayscale patterns over large areas in epitaxial YBCO thin films, achieving finely tuned optical and superconducting transport properties by locally controlling the stoichiometry through maskless direct laser writing under ambient conditions. Cryogenic magneto-optical imaging and transport measurements in irradiated devices directly demonstrate the spatial tuning of the critical temperature and carrier density with the patterning conditions. Correlated Raman microscopy and reflectometry of the patterned regions indicate a laser-power dependent oxygen depletion in the irradiated regions. The proposed laser-controlled stoichiometry approach provides a direct and scalable method to navigate the phase diagram of high-Tc superconducting oxides, offering new possibilities for integrating functional nanostructures into superconducting devices.

preprint2020arXiv

On the origin of the giant spin detection efficiency in tunnel barrier based electrical spin detector

Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric transport occurs. In this work, we demonstrate that non-linearity may lead to a spin-to-charge conversion efficiency larger than 10 times the spin polarization of the tunnel barrier when the latter is under bias of a few mV. We identify the underlying mechanisms responsible for this remarkably efficient spin detection as the tunnel barrier deformation and the conduction band shift resulting from a change of applied voltage. In addition, we derive an approximate analytical expression for the detector spin sensitivity $P_{\textrm{det}}(V)$. Calculations performed for different barrier shapes show that this enhancement is present in oxide barriers as well as in Schottky tunnel barriers even if the dominant mechanisms differs with the barrier type. Moreover, although the spin signal is reduced at high temperatures, it remains superior to the value predicted by the linear model. Our findings shed light into the interpretation and understanding of electrical spin detection experiments and open new paths to optimize the performance of spin transport devices.

preprint2019arXiv

Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.