Researcher profile

Ákos Hoffmann

Ákos Hoffmann contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Signature of large-gap quantum spin Hall state in the layered mineral jacutingaite

Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt$_2$HgSe$_3$) is a candidate QSH material, realizing the long sought after the Kane-Mele insulator. Using scanning tunneling microscopy, we measure a band gap of 110 meV, above room temperature, and identify the hallmark edge states. By calculating the $\mathbb{Z}_2$ invariant, we confirm the topological nature of the gap. Being a layered mineral, it is stable in air and can be thinned down to a few atomic layers by mechanical exfoliation. Furthermore, we demonstrate that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library, greatly expanding the possibilities for tuning 2D electron systems using stacks of layered materials.

preprint2010arXiv

Electrostatic topology of ferroelectric domains in YMnO$_3$

Trimerization-polarization domains in ferroelectric hexagonal YMnO$_3$ were resolved in all three spatial dimensions by piezoresponse force microscopy. Their topology is dominated by electrostatic effects with a range of 100 unit cells and reflects the unusual electrostatic origin of the spontaneous polarization. The response of the domains to locally applied electric fields explains difficulties in transferring YMnO$_3$ into a single-domain state. Our results demonstrate that the wealth of non-displacive mechanisms driving ferroelectricity that emerged from the research on multiferroics are a rich source of alternative types of domains and domain-switching phenomena.

preprint2010arXiv

Lateral Signals in Piezoresponse Force Microscopy at Domain Boundaries of Ferroelectric Crystals

In piezoresponse force microscopy a lateral signal at the domain boundaries is occasionally observed. In recent years, a couple of experiments have been reported and varying explanations for the origin of this lateral signal have been proposed. Additionally, elaborated theoretical modeling for this particular issue has been carried out. Here we present experimental data obtained on different crystallographic cuts of $\rm LiNbO_3$, $\rm BaTiO_3$, and $\rm KTiOPO_4$ single crystals. We could thereby rule out some of the explanations proposed so far, introduce another possible mechanism, and quantitatively compare our results to the existing modeling.