Researcher profile

Ajeesh M. Sahadevan

Ajeesh M. Sahadevan contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Electric-field-induced magnetization changes in Co/Al2O3 granular multilayers

We study experimentally the effect of electric field on the magnetization of Co/Al2O3 granular multilayers. We observe two distinct regimes: (a) low-field regime when the net magnetization of the system changes in a reversible way with the applied electric field and (b) high-field regime when the magnetization decreases irreversibly. The former is attributed to the changes in the relative 3d-orbital occupation of the minority and majority bands in the Co granules. A theoretical model has been developed to explain the electric field induced changes in the band structure of the granular system and hence the magnetic moment. The latter result may be understood assuming the electric field induces oxygen migration from Al2O3 to the Co granules, since an increase in oxidation state of the Co granules is shown, through ab-initio calculations, to give rise to a reduced magnetization of the system.

preprint2012arXiv

Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions

We study the effect of strain on magnetic tunnel junctions (MTJ) induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain.

preprint2012arXiv

Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions

The capacitance of MgO based magnetic tunnel junctions (MTJs) has been observed to be magnetic field dependent. We propose an equivalent circuit for the MTJs with a parallel-leaky capacitance (Cl) across the series combination of geometric and interfacial capacitance. The analysis of junctions with different tunneling magnetoresistance values suggests higher Cl for low TMR junctions. Using Cole-Cole plots the capacitive nature of MTJs is manifested. Fitting with Maxwell-Wagner capacitance model validates the RC parallel network model for MTJs and the extracted field dependent parameters match with the experimental values.