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Researcher profile

Ahmed S. Elwakil

Ahmed S. Elwakil contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mtrl-scieess.SP

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Published work

2 published item(s)

preprint2022arXiv

Time-Domain and Frequency-Domain Mappings of Voltage-to-Charge and Charge-to-Voltage in Capacitive Devices

In this work, we aim to show that there are generally four possible mapping functions that can be used to map the time-domain or frequency-domain representations of an applied voltage input to the resulting time-domain or frequency-domain electrical charge output; i.e. when the capacitive device is voltage-charged. Alternatively, there are four more possible combinations when the device is current-charged. The dual relationship between each pair of functions for the case of voltage or charge input are provided in terms of single or double Fourier transforms. All eight system functions coincide with each other if and only if a constant time- and frequency-independent capacitance is considered.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Information Encoding/Decoding using the Memory Effect in Fractional-order Capacitive Devices

In this study, we show that the discharge voltage pattern of a fractional-order supercapacitor from the same initial steady-state voltage into a constant resistor is dependent on the past charging voltage profile. The charging voltage was designed to follow a power-law function, i.e. $v_c(t)=V_{cc} \left( {t}/{t_{ss}}\right)^p \;(0<t \leqslant t_{ss})$, in which $t_{ss}$ (charging time duration between zero voltage to the terminal voltage $V_{cc}$) and $p$ ($0<p<1$) act as two variable parameters. We used this history-dependence of the dynamic behavior of the device to uniquely retrieve information pre-coded in the charging waveform pattern. Furthermore, we provide an analytical model based on fractional calculus that explains phenomenologically the information storage mechanism. The use of this intrinsic material memory effect may lead to new types of methods for information storage and retrieval.

0 citations0 reviewsNo code linkedOpen access