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Abhishek Mishra

Abhishek Mishra contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

HipBone: A performance-portable GPU-accelerated C++ version of the NekBone benchmark

We present hipBone, an open source performance-portable proxy application for the Nek5000 (and NekRS) CFD applications. HipBone is a fully GPU-accelerated C++ implementation of the original NekBone CPU proxy application with several novel algorithmic and implementation improvements which optimize its performance on modern fine-grain parallel GPU accelerators. Our optimizations include a conversion to store the degrees of freedom of the problem in assembled form in order to reduce the amount of data moved during the main iteration and a portable implementation of the main Poisson operator kernel. We demonstrate near-roofline performance of the operator kernel on three different modern GPU accelerators from two different vendors. We present a novel algorithm for splitting the application of the Poisson operator on GPUs which aggressively hides MPI communication required for both halo exchange and assembly. Our implementation of nearest-neighbor MPI communication then leverages several different routing algorithms and GPU-Direct RDMA capabilities, when available, which improves scalability of the benchmark. We demonstrate the performance of hipBone on three different clusters housed at Oak Ridge National Laboratory, namely the Summit supercomputer and the Frontier early-access clusters, Spock and Crusher. Our tests demonstrate both portability across different clusters and very good scaling efficiency, especially on large problems.

preprint2020arXiv

Image Completion and Extrapolation with Contextual Cycle Consistency

Image Completion refers to the task of filling in the missing regions of an image and Image Extrapolation refers to the task of extending an image at its boundaries while keeping it coherent. Many recent works based on GAN have shown progress in addressing these problem statements but lack adaptability for these two cases, i.e. the neural network trained for the completion of interior masked images does not generalize well for extrapolating over the boundaries and vice-versa. In this paper, we present a technique to train both completion and extrapolation networks concurrently while benefiting each other. We demonstrate our method's efficiency in completing large missing regions and we show the comparisons with the contemporary state of the art baseline.

preprint2019arXiv

Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs

Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a universal approach involving dry chemistry to enhance atomic orbital interaction between various TMDs (MoS2, WS2, MoSe2 and WSe2) & metal contacts has been experimentally demonstrated. Quantum chemistry between TMDs, Chalcogens and metals has been explored using detailed atomistic (DFT & NEGF) simulations, which is then verified using Raman, PL and XPS investigations. Atomistic investigations revealed lower contact resistance due to enhanced orbital interaction and unique physics of charge sharing between constituent atoms in TMDs with introduced Chalcogen atoms which is subsequently validated through experiments. Besides contact engineering, which lowered contact resistance by 72, 86, 1.8, 13 times in MoS2, WS2, MoSe2 and WSe2 respectively, a novel approach to cure / passivate dangling bonds present at the 2D TMD channel surface has been demonstrated. While the contact engineering improved the ON-state performance (ION, gm, mobility and RON) of 2D TMD FETs by orders of magnitude, Chalcogen based channel passivation was found to improve gate control (IOFF, SS, & VTH) significantly. This resulted in an overall performance boost. The engineered TMD FETs were shown to have performance on par with best reported till date.