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Researcher profile

Aakash Kumar

Aakash Kumar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallComputer VisionCryptography and Securityeess.IVMachine Learning

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Published work

4 published item(s)

preprint2022arXiv

A Gapped Phase in Semimetallic T$_{d}$-WTe$_{2}$ Induced by Lithium Intercalation

The Weyl semimetal WTe$_{2}$ has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, we discover a new electronic phase in WTe$_{2}$ induced by lithium intercalation. The new phase exhibits an increasing resistivity with decreasing temperature and its carrier density is almost two orders of magnitude lower than the carrier density of the semi-metallic T$_{d}$ phase, probed by in situ Hall measurements as a function of lithium intercalation. Our theoretical calculations predict the new lithiated phase to be a charge density wave (CDW) phase with a bandgap of ~ 0.14 eV, in good agreement with the in situ transport data. The new phase is structurally distinct from the initial T$_{d}$ phase, characterized by polarization angle-dependent Raman spectroscopy, and large lattice distortions close to 6 % are predicted in the new phase. Thus, we report the first experimental evidence of CDW in T$_{d}$-WTe$_{2}$, projecting WTe$_{2}$ as a new playground for studying the interplay between CDW and superconductivity. Our finding of a new gapped phase in a two-dimensional (2D) semi-metal also demonstrates electrochemical intercalation as a powerful tuning knob for modulating electron density and phase stability in 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Applying adversarial networks to increase the data efficiency and reliability of Self-Driving Cars

Convolutional Neural Networks (CNNs) are vulnerable to misclassifying images when small perturbations are present. With the increasing prevalence of CNNs in self-driving cars, it is vital to ensure these algorithms are robust to prevent collisions from occurring due to failure in recognizing a situation. In the Adversarial Self-Driving framework, a Generative Adversarial Network (GAN) is implemented to generate realistic perturbations in an image that cause a classifier CNN to misclassify data. This perturbed data is then used to train the classifier CNN further. The Adversarial Self-driving framework is applied to an image classification algorithm to improve the classification accuracy on perturbed images and is later applied to train a self-driving car to drive in a simulation. A small-scale self-driving car is also built to drive around a track and classify signs. The Adversarial Self-driving framework produces perturbed images through learning a dataset, as a result removing the need to train on significant amounts of data. Experiments demonstrate that the Adversarial Self-driving framework identifies situations where CNNs are vulnerable to perturbations and generates new examples of these situations for the CNN to train on. The additional data generated by the Adversarial Self-driving framework provides sufficient data for the CNN to generalize to the environment. Therefore, it is a viable tool to increase the resilience of CNNs to perturbations. Particularly, in the real-world self-driving car, the application of the Adversarial Self-Driving framework resulted in an 18 % increase in accuracy, and the simulated self-driving model had no collisions in 30 minutes of driving.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Heterointerface control over lithium-induced phase transitions in MoS2 heterostructures

Phase transitions of two-dimensional materials and their heterostructures enable many applications including electrochemical energy storage, catalysis, and memory; however, the nucleation pathways by which these transitions proceed remain underexplored, prohibiting engineering control for these applications. Here, we demonstrate that the lithium intercalation-induced 2H-1T' phase transition in MoS2 proceeds via nucleation of the 1T' phase at a heterointerface by monitoring the phase transition of MoS2/graphene and MoS2/hexagonal boron nitride (hBN) heterostructures with Raman spectroscopy in situ during intercalation. We observe that graphene-MoS2 heterointerfaces require an increase of 0.8 V in applied electrochemical potential to nucleate the 1T' phase in MoS2 compared to hBN-MoS2 heterointerfaces. The increased nucleation barrier at graphene-MoS2 heterointerfaces is due to the reduced charge transfer from lithium to MoS2 at the heterointerface as lithium also dopes graphene based on ab initio calculations. Further, we show that the growth of the 1T' domain propagates along the heterointerface, rather than through the interior of MoS2. Our results provide the first experimental observations of the heterogeneous nucleation and growth of intercalation-induced phase transitions in two-dimensional materials and heterointerface effects on their phase transition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Heterointerface effects on lithium-induced phase transitions in intercalated MoS2

The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ~ 100 mJ m-2, suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during electrochemical intercalation of Li+ shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors.

0 citations0 reviewsNo code linkedOpen access