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Aaditya Manjanath

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cond-mat.mtrl-sci cond-mat.mes-hall physics.chem-ph quant-ph

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preprint2020arXiv

Excitation Energies from Thermally-Assisted-Occupation Density Functional Theory: Theory and Computational Implementation

The time-dependent density functional theory (TDDFT) has been broadly used to investigate the excited-state properties of various molecular systems. However, the current TDDFT heavily relies on outcomes from the corresponding ground-state density functional theory (DFT) calculations which may be prone to errors due to the lack of proper treatment in the non-dynamical correlation effects. Recently, thermally-assisted-occupation density functional theory (TAO-DFT) [J.-D. Chai, \textit{J. Chem. Phys.} \textbf{136}, 154104 (2012)], a DFT with fractional orbital occupations, was proposed, explicitly incorporating the non-dynamical correlation effects in the ground-state calculations with low computational complexity. In this work, we develop time-dependent (TD) TAO-DFT, which is a time-dependent, linear-response theory for excited states within the framework of TAO-DFT. With tests on the excited states of H$_{2}$, the first triplet excited state ($1^3Σ_u^+$) was described well, with non-imaginary excitation energies. TDTAO-DFT also yields zero singlet-triplet gap in the dissociation limit, for the ground singlet ($1^1Σ_g^+$) and the first triplet state ($1^3Σ_u^+$). In addition, as compared to traditional TDDFT, the overall excited-state potential energy surfaces obtained from TDTAO-DFT are generally improved and better agree with results from the equation-of-motion coupled-cluster singles and doubles (EOM-CCSD).

preprint2016arXiv

Diffusive nature of thermal transport in stanene

Using the phonon Boltzmann transport formalism and density functional theory based calculations, we show that stanene has a low thermal conductivity. For a sample size of 1$\times$1 $μ$m$^{2}$ ($L\times W$), the lattice thermal conductivities along the zigzag and armchair directions are 10.83 W/m-K and 9.2 W/m-K respectively, at room temperature, indicating anisotropy in the thermal transport. The low values of thermal conductivity are due to large anharmonicity in the crystal resulting in high Grüneisen parameters, and low group velocities. The room temperature effective phonon mean free path is found to be around 17 nm indicating that the thermal transport in stanene is completely diffusive in nature. Furthermore, our study brings out the relative importance of the contributing phonon branches and reveals that, at very low temperatures, the contribution to lattice thermal conductivity comes from the flexural acoustic (ZA) branch and at higher temperatures it is dominated by the longitudinal acoustic (LA) branch. We also show that lattice thermal conductivity of stanene can further be reduced by tuning the sample size and creating rough surfaces at the edges. Such tunability in the lattice thermal conductivity in stanene suggests its applications in thermoelectric devices.

preprint2015arXiv

From semiconductor to metal: A reversible tuning of electronic properties of mono to multilayered SnS$_\mathrm{2}$ under applied strain

Controlled variation of the electronic properties of 2D materials by applying strain has emerged as a promising way to design materials for customized applications. Using first principles density functional theory calculations, we show that while the electronic structure and indirect band gap of SnS$_\mathrm{2}$ do not change significantly with the number of layers, they can be reversibly tuned by applying biaxial tensile (BT), biaxial compressive (BC), and normal compressive (NC) strains. Mono to multilayered SnS$_\mathrm{2}$ exhibit a reversible semiconductor to metal transition (S-M) at strain values of 0.17, $-$0.26, and $-$0.24 under BT, BC, and NC strains, respectively. Due to weaker interlayer coupling, the critical strain value required to achieve S-M transition in SnS$_\text{2}$ under NC strain is much higher than for MoS$_\mathrm{2}$. The S-M transition for BT, BC, and NC strains is caused by the interaction between the S-$p_z$ and Sn-$s$, S-$p_x$/$p_y$ and Sn-$s$, and S-$p_z$ and Sn-$s$ orbitals, respectively.

preprint2014arXiv

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Phosphorene, a two-dimensional (2D) analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field, which are difficult to achieve experimentally. Here, we show using density functional theory based calculations the possibility of tuning electronic properties by applying normal compressive strain in bilayer phosphorene. A complete and fully reversible semiconductor to metal transition has been observed at $\sim13.35\%$ strain, which can be easily realized experimentally. Furthermore, a direct to indirect bandgap transition has also been observed at $\sim3\%$ strain, which is a signature of unique band-gap modulation pattern in this material. The absence of negative frequencies in phonon spectra as a function of strain demonstrates the structural integrity of the sheets at relatively higher strain range. The carrier mobilities and effective masses also do not change significantly as a function of strain, keeping the transport properties nearly unchanged. This inherent ease of tunability of electronic properties without affecting the excellent transport properties of phosphorene sheets is expected to pave way for further fundamental research leading to phosphorene-based multi-physics devices.