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Researcher profile

A. Zimmers

A. Zimmers contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

8 published item(s)

preprint2015arXiv

Effects of electron-phonon interactions on the electron tunneling spectrum of PbS quantum dots

We present a tunnel spectroscopy study of single PbS Quantum Dots (QDs) as function of temperature and gate voltage. Three distinct signatures of strong electron-phonon coupling are observed in the Electron Tunneling Spectrum (ETS) of these QDs. In the shell-filling regime, the $8\times$ degeneracy of the electronic levels is lifted by the Coulomb interactions and allows the observation of phonon sub-bands that result from the emission of optical phonons. At low bias, a gap is observed in the ETS that cannot be closed with the gate voltage, which is a distinguishing feature of the Franck-Condon (FC) blockade. From the data, a Huang-Rhys factor in the range $S\sim 1.7 - 2.5$ is obtained. Finally, in the shell tunneling regime, the optical phonons appear in the inelastic ETS $d^2I/dV^2$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Verwey transition in single magnetite nanoparticles

We present a tunnel spectroscopy study of the electronic spectrum of single magnetite \chemform{Fe_3O_4} nanoparticles trapped between nanometer-spaced electrodes. The Verwey transition is clearly identified in the current voltage-characteristics where we find that the transition temperature is electric field dependent. The data show the presence of localized states at high energy, $\varepsilon \sim 0.6eV$, which can be attributed to polaron states. At low energy, the density of states (DOS) is suppressed at the approach of the Verwey transition. Below the Verwey transition, a gap, $Δ\sim 300meV$, is observed in the spectrum. In contrast, no gap is observed in the high temperature phase, implying that electronic transport in this phase is possibly due to polaron hopping with activated mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electric-field-driven phase transition in vanadium dioxide

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E~6.5\times10^7 Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

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preprint2011arXiv

Electron cotunneling transport in gold nanocrystal arrays

We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as function of temperature $σ\propto e^{-T_0/T}$ and as function of electric field $I \propto e^{-\mathcal{E}_0/\mathcal{E}}$. For better conducting arrays, i.e. with small ligands, the transport properties crossover to the cotunneling regime and follows Efros-Shklovskii laws as function of temperature $σ\propto e^{-(T_{ES}/T)^{1/2}}$ and as function of electric field $I \propto e^{-(\mathcal{E}_{ES}/\mathcal{E})^{1/2}}$. The data shows that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.

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preprint2009arXiv

Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films

We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged.

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preprint2009arXiv

Influence of ion implantation on the magnetic and transport properties of manganite films

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.

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preprint2004arXiv

Infrared Properties of Electron Doped Cuprates: Tracking Normal State Gaps and Quantum Critical Behavior in Pr(2-x)Ce(x)CuO(4)

We report the temperature dependence of the infrared-visible conductivity of Pr(2-x)Ce(x)CuO(4) thin films. When varying the doping from a non-superconducting film (x = 0.11) to a superconducting overdoped film (x = 0.17), we observe, up to optimal doping (x = 0.15), a partial gap opening. A model combining a spin density wave gap and a frequency and temperature dependent self energy reproduces our data reasonably well. The magnitude of this gap extrapolates to zero for x ~ 0.17 indicating the coexistence of magnetism and superconductivity in this material and the existence of a quantum critical point at this Ce concentration.

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preprint2004arXiv

On the optical conductivity of Electron-Doped Cuprates I: Mott Physics

The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials. The optical spectrum is fit to a quasiparticle scattering model; while the model fits the optical data well, gross inconsistencies with photoemission data are found, implying the presence of a large, strongly doping dependent Landau parameter.

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