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A. Yasui

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cond-mat.str-el cond-mat.mtrl-sci

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preprint2020arXiv

Charge correlation in V $_2$ OPO $_4$ probed by hard x-ray photoemission spectroscopy

Electronic properties of V $_2$ OPO $_4$ have been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) and subsequent theoretical calculations. The V 1 $s$ and 2 $p$ HAXPES spectra are consistent with the charge ordering of V $^{2+}$ and V $^{3+}$ . The binding energy difference between the V $^{2+}$ and V $^{3+}$ components is unexpectedly large indicating large bonding-antibonding splitting between them in the final states of core level photoemission. The V 1 $s$ HAXPES spectrum exhibits a charge transfer satellite which can be analyzed by configuration interaction calculations on a V $_2$ O $_9$ cluster. The V 3 $d$ spectral weight near the Fermi level is assigned to the 3 $d$ $t_{2g}$ orbitals of the V $^{2+}$ site. The broad V 3 $d$ spectral distribution is consistent with the strong hybridization between V $^{2+}$ and V $^{3+}$ in the ground state. The core level and valence band HAXPES results indicate substantial charge transfer from the V $^{2+}$ site to the V $^{3+}$ site.7 figure

preprint2014arXiv

Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe $_{1.2}$ Si $_{0.8}$ and CeCoSi $_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4 $f$ - and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4 $f$ -Fermi surfaces of CeCoSi $_{2}$ is smaller than that of CeCoGe $_{1.2}$ Si $_{0.8}$ , indicating the evolution of the Ce 4 $f$ -Fermi surface with the increase of the hybridization strength. In comparision with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure are roughly explained, indicating the importance of strong correlation effects. We also discuss the relation between the Ce 4 $f$ -Fermi surface variation and the Kondo peaks.

preprint2013arXiv

Direct k-space mapping of the electronic structure in an oxide-oxide interface

The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir.

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A. Yasui

Research overview

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3 publications

Charge correlation in V $_2$ OPO $_4$ probed by hard x-ray photoemission spectroscopy

Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

Direct k-space mapping of the electronic structure in an oxide-oxide interface

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A. Yasui

Research overview

Is this your work?

3 publications

Charge correlation in V2_22​OPO4_44​ probed by hard x-ray photoemission spectroscopy

Fermi Surface Variation of Ce 4f-electrons in Hybridization Controlled Heavy-Fermion Systems

Direct k-space mapping of the electronic structure in an oxide-oxide interface

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Charge correlation in V $_2$ OPO $_4$ probed by hard x-ray photoemission spectroscopy