Source author record

A. Vedyaev

A. Vedyaev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2009arXiv

The two-bands model of the magnetic tunnel junctions in the Fe/Cr/MgO/Fe structure

In this paper we present theoretical studies of spin dependent transport in Fe/Cr/MgO/Fe tunnel junctions with non-collinear alignment of magnetizations of metallic layers comprising these MTJs. Calculations are performed with use of non-equilibrium Green function technique in the framework of Keldysh formalism. WKB approximation is used for wave and Green functions in the trapezoidal barrier region under applied voltage. Electronic structure of ferromagnetic electrodes is modeled with two bands model, i.e. with majority s-electrons and minority d-holes. Furthermore, we introduce s-d hybridization by calculating the corresponding perturbation corrections for the wave and Green functions.

preprint2007arXiv

Spin Diode Based on Fe/MgO Double Tunnel Junction

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.

preprint2004arXiv

Diode effect in magnetic tunnel junctions

The influence on the I-V characteristics and tunnel magnetoresistance (TMR), of impurities embedded into the insulating barrier I separating the two ferromagnetic electrodes F of a magnetic tunnel junction, was theoretically investigated. When the energy of the electron's bound state at the impurity site is close to the Fermi energy, it is shown that the current and TMR are strongly enhanced in the vicinity of the impurity. If the position of the impurity inside the barrier is asymmetric, e.g. closer to one of the interfaces F/I, the I-V characteristic exhibits a quasidiode behavior. The case of a single impurity and of a random distribution of impurities within a plane were both studied.