Source author record

A. Iovan

A. Iovan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

4works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2019arXiv

Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets

We study experimentally nanoscale Josephson junctions and Josephson spin-valves containing strong Ni ferromagnets. We observe that in contrast to junctions, spin valves with the same geometry exhibit anomalous Ic(H) patterns with two peaks separated by a dip. We develop several techniques for in-situ characterization of micromagnetic states in our nano-devices, including magnetoresistance, absolute Josephson fluxometry and First-Order-Reversal-Curves analysis. They reveal a clear correlation of the dip in supercurrent with the antiparallel state of a spin-valve and the peaks with two noncollinear magnetic states, thus providing evidence for generation of spin-triplet superconductivity. A quantitative analysis brings us to a conclusion that the triplet current in out Ni-based spin-valves is approximately three times larger than the conventional singlet supercurrent.

preprint2013arXiv

Stimulated emission of radiation using spin-population inversion in metals: a spin-laser

Arrays of 10 nm-diameter point contacts of exchange-coupled spin-majority/spin-minority ferromagnetic metals, integrated into infrared-terahertz range photon resonators, are fabricated and measured electrically and optically. Giant, threshold-type electronic excitations under high-current pumping of the devices are observed as abrupt but reversible steps in device resistance, in many cases in access of 100%, which correlate with optical emission from the devices. The results are interpreted as due to stimulated spin-flip electron-photon relaxation in the system.

preprint2012arXiv

Sub-10 nm colloidal lithography for integrated spin-photo-electronic devices

Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on a given material surface, which can then be transferred via etching into nano-structures of various sizes, shapes, and patterns [2,3]. Such nanostructures can be used in biology for detecting proteins [4] and DNA [5,6], for producing artificial crystals in photonics [7,8] and GHz oscillators in spin-electronics [9-14]. Scaling of colloidal patterning down to 10-nm and below, dimensions comparable or smaller than the main relaxation lengths in the relevant materials, including metals, is expected to enable a variety of new ballistic transport and photonic devices, such as spin-flip THz lasers [15]. In this work we extend the practice of colloidal lithography to producing large-area, near-ballistic-injection, sub-10 nm point-contact arrays and demonstrate their integration in to spin-photo-electronic devices.

preprint2007arXiv

Spin Diode Based on Fe/MgO Double Tunnel Junction

We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.