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Researcher profile

A. V. Shumilin

A. V. Shumilin contributes to research discovery and scholarly infrastructure.

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cond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

13 published item(s)

preprint2021arXiv

Dynamic spin polarization in organic semiconductors with intermolecular exchange interaction

It is shown that in organic semiconductors where organic magnetoresistance (OMAR) is observed, the exchange interaction between electrons and holes localized at different molecules leads to dynamic spin polarization in the direction of the applied magnetic field. The polarization appears even at room temperature due to the non-equilibrium conditions. The strong spin polarization requires exchange energy to be comparable with Zeeman energy in the external field and be larger or comparable with the energy of hyperfine interaction of electron and nuclear spins. The exchange interaction also modifies the lineshape of OMAR.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Microscopic theory of OMAR based on kinetic equations for quantum spin correlations

The correlation kinetic equation approach is developed that allows describing spin correlations in a material with hopping transport. The quantum nature of spin is taken into account. The approach is applied to the problem of the bipolaron mechanism of organic magnetoresistance (OMAR) in the limit of large Hubbard energy and small applied electric field. The spin relaxation that is important to magnetoresistance is considered to be due to hyperfine interaction with atomic nuclei. It is shown that the lineshape of magnetoresistance depends on short-range transport properties. Different model systems with identical hyperfine interaction but different statistics of electron hops lead to different lineshapes of magnetoresistance including the two empirical laws $H^2/(H^2 + H_0^2)$ and $H^2/(|H| + H_0)^2$ that are commonly used to fit experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin dynamics of hopping electrons in quantum wires: algebraic decay and noise

We study theoretically spin decoherence and intrinsic spin noise in semiconductor quantum wires caused by an interplay of electron hopping between the localized states and the hyperfine interaction of electron and nuclear spins. At a sufficiently low density of localization sites the hopping rates have an exponentially broad distribution. It allows the description of the spin dynamics in terms of closely-situated "pairs" of sites and single "reaching" states, from which the series of hops result in the electron localized inside a "pair". The developed analytical model and numerical simulations demonstrate disorder-dependent algebraic tails in the spin decay and power-law singularity-like features in the low-frequency part of the spin noise spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin excitations in systems with hopping electron transport and strong position disorder in a large magnetic field

We discuss the spin excitations in systems with hopping electron conduction and strong position disorder. We focus on the problem in a strong magnetic field when the spin Hamiltonian can be reduced to the effective single-particle Hamiltonian and treated with conventional numerical technics. It is shown that in a 3D system with Heisenberg exchange interaction the spin excitations have a delocalized part of the spectrum even in the limit of strong disorder, thus leading to the possibility of the coherent spin transport. The spin transport provided by the delocalized excitations can be described by a diffusion coefficient. Non-homogenous magnetic fields lead to the Anderson localization of spin excitations while anisotropy of the exchange interaction results in the Lifshitz localization of excitations. We discuss the possible effect of the additional exchange-driven spin diffusion on the organic spin-valve devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Kinetic equations for the hopping transport and spin relaxation in random magnetic field

We derive the kinetic equations for the hopping transport that take into account electron spin and the possibility of double occupation. In the Ohmic regime the equations are reduced to the generalized Miller-Abrahams resistor network. We apply these equations to the problem of the magnetic moment relaxation due to the interaction with the random hyperfine fields. It is shown that in a wide range of parameters the relaxation rate is governed by the hops with the similar rates as spin precession frequency. It is demonstrated that at the large time scale spin relaxation is non-exponential. We argue that the non-exponential relaxation of the magnetic moment is related to the spin of electrons in the slow-relaxing traps. Interestingly the traps can significantly influence the spin relaxation in the infinite conducting cluster at large times.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetoresistance in organic spintronic devices: the role of nonlinear effects

We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined as resistance variation between devices with parallel and antiparallel electrode magnetizations (spin valve effect). The voltage dependence of the magnetoresistance splits into three distinct regimes. The first regime matches well known inorganic spintronic regimes, corresponding to barrier controlled spin injection or the well known conductivity mismatch case. The second regime at intermediate voltages corresponds to strongly suppressed magnetoresistance. The third regime develops at higher voltages and accounts for a novel paradigm. It is promoted by the strong non-linearity in the charge transport which strength is characterized by the dimensionless parameter $eU/k_BT$. This nonlinearity, depending on device conditions, can lead to both significant enhancement or to exponential suppression of the spin valve effect in organic devices. We believe that these predictions are valid beyond the case of organic semiconductors and should be considered for any material characterized by strongly non-linear charge transport.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime

We study an effect of moderate magnetic field on variable range hopping conductivity in arrays of ferromagnetic granules separated by tunnel barriers. It is shown that the resulting magnetoresistance can be significantly larger than the standard "giant" magnetoresistance in Fe-N-Fe-N... multilayers. The effect is related to a gain in densities of states available for the virtual processes within the intermediate granules due to magnetic-field induced alignment of the granule magnetizations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low frequency excitations in the Coulomb Glass: numerical analysis using the avalanche method

We develop a numerical method, which allows to find pairs of metastable states differing by transition of several electrons. We show that at low temperature these pairs can be treated as local metastable systems that determine low-frequency properties of Coulomb Glass with low external disorder. The contribution of these pairs to low-frequency properties is suppressed when the strength of the external disorder becomes comparable with interaction between neighboring electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Interference mechanism of magnetoresistance in variable range hopping conduction: the effect of paramagnetic electron spins and continuous spectrum of scatterer energies

Despite the fact that the problem of interference mechanism of magnetoresistance in semiconductors with hopping conductivity was widely discussed, most of existing studies were focused on the model of spinless electrons. This model can be justified only when all electron spins are frozen. However there is always an admixture of free spins in the semiconductor. This study presents the theory of interference contribution to magnetoresistance that explicitly includes effects of both frozen and free electron spins. We consider the cases of small and large number of scatterers in the hopping event. For the case of large number of scatterers the approach is used that takes into account the dispersion of the scatterer energies. We compare our results with existing experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetoresistance in semiconductor structures with hopping conductivity: effects of random potential and generalization for the case of acceptor states

We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be a short-range one in contrast to the long-range one for purely Coulomb hopping centers. This factor to some extent suppresses the negative interference magnetoresistance and can lead to its decrease with temperature decrease which is in agreement with earlier experimental observations. We have also extended the theoretical models of positive spin magnetoresistance, in particular, related to a presence of doubly occupied states (corresponding to the upper Hubbard band) to the case of acceptor states in 2D structures. We have shown that this mechanism can dominate over classical wave-shrinkage magnetoresistance at low temperatures. Our results are in semi-quantitative agreement with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field

We observed a slow relaxation of magnetoresistance in response to applied magnetic field in selectively doped p-GaAs-AlGaAs structures with partially filled upper Hubbard band. We have paid a special attention to exclude the effects related to temperature fluctuations. Though this effect is important, we have found that the general features of slow relaxation still persist. This behavior is interpreted as related to the properties of the Coulomb glass formed by charged centers with account of spin correlations, which are sensitive to an external magnetic field. Variation of the magnetic field changes numbers of impurity complexes of different types. As a result, it effects the shape and depth of the polaron gap formed at the states belonging to the percolation cluster responsible for the conductance. The suggested model explains both the qualitative behavior and the order of magnitude of the slowly relaxing magnetoresistance.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Effect of a Magnetic Field on the Dipole Echo in Glasses with Nuclear Quadrupole Moments

The effect of a magnetic field on the dipole echo amplitude in glasses at temperatures of about 10 mK caused by nonspherical nuclei with electric quadrupole moments has been studied theoretically. It has been shown that in this case, the two-level systems (TLS's) that determine the glass properties at low temperatures are transformed into more complicated multilevel systems. These systems have new properties as compared to usual TLS's and, in particular, exhibit oscillations of electric dipole echo amplitude in magnetic field. A general formula that describes the echo amplitude in an arbitrary split TLS has been derived with perturbation theory. Detailed analytic and numerical analysis of the formula has been performed. The theory agrees qualitatively and quantitatively well with experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Oscillations of Echo Amplitude in Glasses in a Magnetic Field Induced by Nuclear Dipole-Dipole Interaction

The effect of a magnetic field on the dipole echo amplitude in glasses (at temperatures of about 10 mK) induced by the dipole-dipole interaction of nuclear spins has been theoretically studied. It has been shown that a change in the positions of nuclear spins as a result of tunneling and their interaction with the external magnetic field E_H lead to a nonmonotonic magnetic field dependence of the dipole echo amplitude. The approximation that the nuclear dipole-dipole interaction energy E_d is much smaller than the Zeeman energy E_H has been found to be valid in the experimentally important cases. It has been shown that the dipole echo amplitude in this approximation may be described by a simple universal analytic function independent of the microscopic structure of the two-level systems. An excellent agreement of the theory with the experimental data has been obtained without fitting parameters (except for the unknown echo amplitude)

0 citations0 reviewsNo code linkedOpen access