Researcher profile

A. V. Pronin

A. V. Pronin contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Magneto-optics of a Weyl semimetal beyond the conical band approximation: the case study of TaP

Landau-level spectroscopy, the optical analysis of electrons in materials subject to a strong magnetic field, is a versatile probe of the electronic band structure and has been successfully used in the identification of novel states of matter such as Dirac electrons, topological materials or Weyl semimetals. The latter arise from a complex interplay between crystal symmetry, spin-orbit interaction and inverse ordering of electronic bands. Here, we report on unusual Landau-level transitions in the monopnictide TaP that decrease in energy with increasing magnetic field. We show that these transitions arise naturally at intermediate energies in time-reversal-invariant Weyl semimetals where the Weyl nodes are formed by a partially gapped nodal-loop in the band structure. We propose a simple theoretical model for electronic bands in these Weyl materials that captures the collected magneto-optical data to great extent.

preprint2020arXiv

Optical conductivity of multifold fermions: the case of RhSi

We measured the reflectivity of the multifold semimetal RhSi in a frequency range from 80 to 20000 cm$^{-1}$ (10 meV - 2.5 eV) at temperatures down to 10 K. The optical conductivity, calculated from the reflectivity, is dominated by the free-carrier (Drude) contribution below 1000 cm$^{-1}$ (120 meV) and by interband transitions at higher frequencies. The temperature-induced changes in the spectra are generally weak: only the Drude bands narrow upon cooling, with an unscreened plasma frequency that is constant with temperature at approximately 1.4 eV, in agreement with a weak temperature dependence of the free-carrier concentration determined by Hall measurements. The interband portion of conductivity exhibits two linear-in-frequency regions below 5000 cm$^{-1}$ ($\sim$ 600 meV), a broad flat maximum at around 6000 cm$^{-1}$ (750 meV), and a further increase starting around 10000 cm$^{-1}$ ($\sim$ 1.2 eV). We assign the linear behavior of the interband conductivity to transitions between the linear bands near the band crossing points. Our findings are in accord with the predictions for the low-energy conductivity behavior in multifold semimetals and with earlier computations based on band structure calculations for RhSi.