Researcher profile

A. Tsukada

A. Tsukada contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2010arXiv

Raman light scattering study and microstructural analysis of epitaxial films of the electron-doped superconductor La_{2-x}Ce_{x}CuO_{4}

We present a detailed temperature-dependent Raman light scattering study of optical phonons in molecular-beam-epitaxy-grown films of the electron-doped superconductor La_{2-x}Ce_{x}CuO_{4} close to optimal doping (x ~ 0.08, T_c = 29 K and x ~ 0.1, T_c = 27 K). The main focus of this work is a detailed characterization and microstructural analysis of the films. Based on micro-Raman spectroscopy in combination with x-ray diffraction, energy-dispersive x-ray analysis, and scanning electron microscopy, some of the observed phonon modes can be attributed to micron-sized inclusions of Cu_{2}O. In the slightly underdoped film (x ~ 0.08), both the Cu_{2}O modes and others that can be assigned to the La_{2-x}Ce_{x}CuO_{4} matrix show pronounced softening and narrowing upon cooling below T ~ T_c. Based on control measurements on commercial Cu_{2}O powders and on a comparison to prior Raman scattering studies of other high-temperature superconductors, we speculate that proximity effects at La_{2-x}Ce_{x}CuO_{4}/Cu_{2}O interfaces may be responsible for these anomalies. Experiments on the slightly overdoped La_{2-x}Ce_{x}CuO_{4} film (x ~ 0.1) did not reveal comparable phonon anomalies.

preprint2004arXiv

New superconduting cuprates with no effective doping: T'-(La3+)2-x(RE3+)xCuO4

We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~ 650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films.