Source author record

A. Sosso

A. Sosso appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2019arXiv

Practical applications of quantum sensing: a simple method to enhance sensitivity of Nitrogen-Vacancy-based temperature sensors

Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually detected by by monitoring the center photoluminescence emission intensity. Albeit several schemes have already been proposed, the search for the simplest and most effective one is of key relevance for real applications. Here we present a new continuous-wave lock-in based technique able to reach unprecedented sensitivity in temperature measurement at micro/nanoscale volumes (4.8 mK/Hz$^{1/2}$ in $μ$m$^3$). Furthermore, the present method has the advantage of being insensitive to the enviromental magnetic noise, that in general introduces a bias in the temperature measurement.

preprint2012arXiv

Universality of transport properties of ultra-thin oxide films

We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al surface. In the superconducting state these devices have revealed a strong subgap current leakage. Analyzing Cooper-pair and quasiparticle currents across the devices, we conclude that the strong suppression of the subgap resistance comparing with conventional tunnel junctions originates from a universal bimodal distribution of transparencies across the Al-oxide barrier proposed earlier by Schep and Bauer. We suggest a simple physical explanation of its source in the nanometer-thick oxide films relating it to strong local barrier-height fluctuations which are generated by oxygen vacancies in thin aluminum oxide tunnel barriers formed by thermal oxidation.