Researcher profile

A. Ruff

A. Ruff contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Absence of polar order in LuFe2O4

LuFe2O4 often is considered as a prototypical multiferroic with polar order arising from the electronic degrees of freedom only ("electronic ferroelectricity"). In the present work, we check the intrinsic nature of the dielectric response of this material by performing dielectric measurements of polycrystalline samples with different types of contact materials and with different grain sizes. In addition, frequency-dependent measurements of the electric-field dependent polarization are provided. The obtained results unequivocally prove that the reported colossal dielectric constants in LuFe2O4, which were interpreted in terms of electronic ferroelectricity, are of non-intrinsic surface-related origin. The intrinsic dielectric properties of this material show no indications of any ferroelectric order and, thus, LuFe2O4 is not multiferroic. Its intrinsic dielectric constant is close to 20 and its dielectric loss is dominated by charge transport via variable range hopping.

preprint2009arXiv

Probing the interface of Fe3O4/GaAs thin films by hard x-ray photoelectron spectroscopy

Magnetite (Fe3O4) thin films on GaAs have been studied with HArd X-ray PhotoElectron Spectroscopy (HAXPES) and low-energy electron diffraction. Films prepared under different growth conditions are compared with respect to stoichiometry, oxidation, and chemical nature. Employing the considerably enhanced probing depth of HAXPES as compared to conventional x-ray photoelectron spectroscopy (XPS) allows us to investigate the chemical state of the film-substrate interfaces. The degree of oxidation and intermixing at the interface are dependent on the applied growth conditions; in particular, we found that metallic Fe, As2O3, and Ga2O3 exist at the interface. These interface phases might be detrimental for spin injection from magnetite into GaAs.

preprint2009arXiv

Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy

The conducting interface of LaAlO$_3$/SrTiO$_3$ heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2$p$ signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO$_3$ overlayers. Our results point to an electronic reconstruction in the LaAlO$_3$ overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.