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A. R. Kulkarni

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cond-mat.mtrl-sci

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preprint2015arXiv

Electrical properties of RF sputtered PMN-PT thin films on LCMO buffered platinized glass substrate

Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work a systematic study of PMN-PT thin films grown on LCMO buffered platinized glass substrates has been undertaken. The films were grown at room temperature using RF magnetron sputtering. Single phase PMN-PT films could be obtained by exsitu thermal annealing in air for 2h at temperatures 550 and 650 degree C. The films annealed at temperatures lower than 550 degree C and films without buffer layer showed presence of pyrochlore. Effect of annealing temperature on the microstructure, dielectric and ferroelectric properties of the PMN-PT films has been investigated. Scanning electron micrographs of single phase PMN-PT films show a bimodal grain size distribution for films annealed at 550 and 650 degree C. A high dielectric constant of 1300 and a remnant polarization (2Pr) of 17micro C/cm2 were observed for film annealed at 650 degree C.

preprint2013arXiv

Diffuse phase transition and electrical properties of lead-free piezoelectric (LixNa1-x)NbO3 (0.04 to x to 0.20) ceramics near morphotropic phase boundary

Temperature-dependent dielectric permittivity of lead-free (LixNa1-x)NbO3 for nominal x = 0.04-0.20, prepared by solid state reaction followed by sintering, was studied to resolve often debated issue pertaining to exactness of morphotropic phase boundary (MPB) location along with structural aspects and phase stability in the system near MPB. Interestingly, a diffuse phase transition has been observed in the dielectric permittivity peak arising from the disorder induced in A-site and structural frustration in the perovskite cell due to Li substitution. A partial phase diagram has been proposed based on temperature-dependent dielectric permittivity studies. The room temperature piezoelectric and ferroelectric properties were investigated and the ceramics with x = 0.12 showed relatively good electrical properties (d33 = 28 pC/N, kp = 13.8%, Qm = 440, Pr = 12.5 {micro}C/cm2, EC = 43.2 kV/cm, Tm = 340 oC). These parameter values make this material suitable for piezoelectric resonator and filter applications. Moreover, a high dielectric permittivity (= 2703) with broad diffuse peak near transition temperature along with low dielectric loss (< 4%) in a wide temperature range (50-250 oC) found in this material may also have a potential application in high-temperature multilayer capacitors in automotive and aerospace related industries.