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Researcher profile

A. Nikolaeva

A. Nikolaeva contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2011arXiv

Surface state band mobility and thermopower in semiconducting bismuth nanowires

Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20-, 30-, 50- and 200-nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities and mobilities. Surface electrons have high mobilities exceeding 2(m^2)/(Vsec) and contribute strongly to the thermopower, dominating for temperatures T< 100 K. The surface thermopower is - 1.2 T microvolt/(K^2), a value that is consistent with theory, raising the prospect of developing nanoscale thermoelectrics based on surface bands.

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preprint2008arXiv

Observation of three-dimensional behavior in surface states of bismuth nanowires and the evidence for bulk Bi charge fractionalization

Whereas bulk bismuth supports very-high mobility, light, Dirac electrons and holes in its interior, its boundaries support a layer of heavy electrons in surface states formed by spin orbit interaction in the presence of the surface electric field. Small diameter d trigonal Bi nanowires (30 nm < d < 200 nm) were studied via magnetotransport at low temperatures and for fields up to 14 T in order to investigate the role of surfaces in electronic transport. A two-dimensional behavior was expected for surface charges; however we found instead a three-dimensional behavior, with a rich spectrum of Landau levels in a nearly spherical Fermi surface. This is associated with the long penetration length of surface states of trigonal wires. The prospect of the participation of surface transport and surface-induced relaxation of bulk carriers in the electronic properties of macroscopic samples is evaluated. We show that recent observations of magnetoquantum peaks in the Nernst thermopower coefficient, attributed to two-dimensional electron gas charge fractionalization, can be more plausibly interpreted in terms of these surface states.

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preprint2003arXiv

Confinement effects and surface-induced charge carriers in Bi Quantum Wires

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires nanowires which are predicted to be a semiconducting show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.

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