Source author record

A. Nikolaeva

A. Nikolaeva appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

Catalog footprint

What is connected

4works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2016arXiv

Observation of Quantized Conductance in the Surface Bands of Bismuth Nanowires

We report the experimental observation of quantized conductance by Rashba bands at the surface of 50-nm Bi nanowires. With increasing magnetic fields along the wire axis, the wires exhibit a stepwise increase of conductance with as many as four distinct plateaus together with oscillatory thermopower. The observations can be accounted for by the increase of the number of propagating surface modes. The modes have very high mobility and are associated with Aharonov-Bohm interference around the perimeter consistently with theory of quasiballistic one-dimensional nanowires considering that Lorentz forces decouple the modes from scattering at the nanowire surface.

preprint2011arXiv

Surface state band mobility and thermopower in semiconducting bismuth nanowires

Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands for which topological insulator behavior consisting of ultrahigh mobilities and enhanced thermopower has been predicted. Bi nanowires realize surface-only electronic transport since they become bulk insulators when they undergo the bulk semimetal-semiconductor transition as a result of quantum confinement for diameters close to 50 nm. We studied 20-, 30-, 50- and 200-nm trigonal Bi wires. Shubnikov-de Haas magnetoresistance oscillations caused by surface electrons and bulklike holes enable the determination of their densities and mobilities. Surface electrons have high mobilities exceeding 2(m^2)/(Vsec) and contribute strongly to the thermopower, dominating for temperatures T< 100 K. The surface thermopower is - 1.2 T microvolt/(K^2), a value that is consistent with theory, raising the prospect of developing nanoscale thermoelectrics based on surface bands.

preprint2008arXiv

Observation of three-dimensional behavior in surface states of bismuth nanowires and the evidence for bulk Bi charge fractionalization

Whereas bulk bismuth supports very-high mobility, light, Dirac electrons and holes in its interior, its boundaries support a layer of heavy electrons in surface states formed by spin orbit interaction in the presence of the surface electric field. Small diameter d trigonal Bi nanowires (30 nm < d < 200 nm) were studied via magnetotransport at low temperatures and for fields up to 14 T in order to investigate the role of surfaces in electronic transport. A two-dimensional behavior was expected for surface charges; however we found instead a three-dimensional behavior, with a rich spectrum of Landau levels in a nearly spherical Fermi surface. This is associated with the long penetration length of surface states of trigonal wires. The prospect of the participation of surface transport and surface-induced relaxation of bulk carriers in the electronic properties of macroscopic samples is evaluated. We show that recent observations of magnetoquantum peaks in the Nernst thermopower coefficient, attributed to two-dimensional electron gas charge fractionalization, can be more plausibly interpreted in terms of these surface states.

preprint2003arXiv

Confinement effects and surface-induced charge carriers in Bi Quantum Wires

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires nanowires which are predicted to be a semiconducting show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.