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A. N. Vasil'ev

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3 publications

preprint2011arXiv

Effect of neutron irradiation on the properties of FeSe compound in superconducting and normal states

Effect of atomic disordering induced by irradiation with fast neutrons on the properties of the normal and superconducting states of polycrystalline samples FeSe has been studied. The irradiation with fast neutrons of fluencies up to 1.25\cdot10^20 cm^-2 at the irradiation temperature Tirr ~ 50 \degree C results in relatively small changes in the temperature of the superconducting transition T_c and electrical resistivity Rho_25. Such a behavior is considered to be traceable to rather low, with respect to that possible at a given irradiation temperature, concentration of radiation defects, which is caused by a simpler crystal structure, considered to other layered compounds.

preprint2003arXiv

Shape memory ferromagnets

In ferromagnetic alloys with shape memory large reversible strains can be obtained by rearranging the martensitic domain structure by a magnetic field. Magnetization through displacement of domain walls is possible in the presence of high magnetocrystalline anisotropy, when martensitic structure rearrangement is energetically favorable compared to the reorientation of magnetic moments. In ferromagnetic Heusler alloys Ni2+x_{2+x}Mn1−x_{1-x}Ga the Curie temperature exceeds the martensitic transformation temperature. The fact that these two temperatures are close to room temperature offers the possibility of magnetically controlling the shape and size of ferromagnets in the martensitic state. In Ni2+x_{2+x}Mn1−x_{1-x}Ga single crystals, a reversible strain of ∼6\sim 6% is obtained in fields of ∼1\sim 1 T.

preprint1999arXiv

Resonant Raman scattering in NaV2O5 as a probe of its electronic structure

In order to investigate the origin of the phase transition observed in NaV2_2O5_5, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition temperature. In the polarized Raman spectra at room temperature we observe resonant enhancement of the 969 cm−1cm^{-1} phonon mode when the laser energy approaches 2.7 eV, presumably related to the (p-d) electron hopping band, O3O_3(pyp_y)-V(dxyd_{xy}), at 3.2 eV. The 969 cm−1cm^{-1} mode originates from the stretching vibrations along the c-axis involving the V-O1O_1 bonds. Since an ellipsometric determination of the dielectric function εccε_{cc} yields no structure in the 1.7 to 5.5 eV photon energy range, we conclude that plane bonds couple strongly with the apical oxygens leading to a large Raman efficiency. In the low-temperature Raman spectra, almost all modes that become active below the phase transition temperature Tc_c=34 K show resonant behavior. The most interesting ones, those at 66 and 106 cm−1cm^{-1}, possibly of magnetic origin, exhibit a resonant intensity enhancement, approximately by an order of magnitude, for laser photon energies around 1.85 eV with respect to 2.43 eV. This resonance effect may be associated with a weak absorption band around 2 eV. Finally, a destructive interference between the resonant and the nonresonant contribution to the Raman scattering amplitude (i.e. an antiresonance) is found in the spectra for most of the (bb) low-temperature modes.

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