Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around \% for thermal neutrons. Upper bound of spatial resolution is evaluated to be m in terms of a standard deviation of the line spread function.