Researcher profile

A. L. Graninger

A. L. Graninger contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor ($ν$) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D systems with additional degrees of freedom it is possible to cause a crossing of the LLs at the Fermi level. At and near these crossings, the FQHE states are often weakened or destroyed. Here we report the observation of an unusual crossing of the two \emph{lowest-energy} LLs in high-mobility GaAs 2D $hole$ systems which brings to life a new \emph{even-denominator} FQHE at $ν=1/2$.

preprint2014arXiv

Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells

We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ν=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Ψ_{331}$) state.

preprint2011arXiv

Reentrant nu = 1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.