Researcher profile

A. Köhler

A. Köhler contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con physics.acc-ph

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preprint2019arXiv

Interferometric optical signature of electron microbunching in laser-driven plasma accelerators

We report observations of coherent optical transition radiation interferometry (COTRI) patterns generated by microbunched ~200-MeV electrons as they emerge from a laser-plasma accelerator. The divergence of the microbunched portion of electrons, deduced by comparison to an analytical COTRI model, is ~6x smaller than the ~3 mrad ensemble beam divergence, while the radius of the microbunched beam, obtained from COTR images on the same shot, is < 3 microns. The combined results show that the microbunched distribution has estimated transverse normalized emittance ~0.5 mm mrad.

preprint2011arXiv

High-field electron spin resonance spectroscopy study of GdO$_{1-x}$F$_{x}$FeAs superconductors

We report a detailed investigation of GdO$_{1-x}$F$_{x}$FeAs (x = 0, 0.07 and 0.14) samples by means of high-field/high-frequency electron spin resonance (HF-ESR) together with measurements of thermodynamic and transport properties. The parent GdOFeAs compound exhibits Fe long-range magnetic order below 128 K, whereas both doped samples do not show such order and are superconducting with T$_c$ = 20 K (x = 0.07) and T$_c$ = 45 K (x = 0.14). The Gd$^{3+}$ HF-ESR reveals an appreciable exchange coupling between Gd and Fe moments, through which the static magnetic order is clearly seen in the parent compound. Owing to this coupling, HF-ESR can probe sensitively the evolution of the magnetism in the FeAs planes upon F doping. It is found that in both superconducting samples, where the Fe long-range order is absent, there are short-range, static on the ESR time scale magnetic correlations between Fe spins. Their occurrence on a large doping scale may be indicative of the ground states' coexistence.

preprint2010arXiv

Growth and characterization of epitaxial LuNi2B2C thin films on MgO single crystals

Biaxially textured LuNi2BC thin films with Tc up to 15.8 K and a residual resistivity ratio up to 15 have been prepared. The films were deposited on MgO(110) substrates using pulsed laser deposition from a stoichiometric target. Via the precise control of the deposition rate, a biaxial texture is favored within a broad range of the deposition temperature. The full epitaxial relationship between the borocarbide film, the \luo interface layer and the substrate is (110)[001]MgO II (110)[001]Lu2O3 II (001)[100]LuNi2B2C. A very sharp in--plane alignment of about 1\textdegree and an out--of--plane order of about 2.5\textdegree was achieved in the \luni layer. However, a systematic study using different deposition temperatures shows that the temperature is crucial for phase formation and appealing superconducting properties. Applying optimized deposition conditions, critical temperatures of up to 15.8 K and steep superconducting transitions of about 0.3 K are reproducibly obtained. We further analyzed the upper critical field Hc2 of one film deposited under optimized conditions. It was resistively measured along the [001] direction and fitted with a power law. The value of Hc2(0) = 9.82 T obtained from that fit is in very good agreement with single crystal data and the power exponent describing the positive curvature for small external magnetic fields of about 0.19 indicates a relatively low intraband scattering in the films.

preprint2005arXiv

Large magnetoresistance in $π$-conjugated semiconductor thin film devices

Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, $B < 100mT$. We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.