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A. Kobayashi

A. Kobayashi contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Measurement of structure dependent radiative $K^{+} \rightarrow e^{+} νγ$ decays using stopped positive kaons

The structure dependent radiative $K^+ \rightarrow e^+ νγ$ ($K_{e2γ}^{\rm SD^+}$) decay was investigated with stopped positive kaons. The $e^+$ momentum spectra containing 574$\pm$30 $K_{e2γ}^{\rm SD^+}$ events with a $K^+ \rightarrow μ^+ ν$ ($K_{\mu2}$) background of 28$\pm$19 events were measured with and without a photon in coincidence and analyzed with Monte Carlo simulations for acceptance and detector response to extract the ratio of the branching ratio of the $K_{e2γ}^{\rm SD^+}$ decay and the $K^+ \rightarrow e^+ ν$ decay including the internal bremsstrahlung process ($K_{e2(γ)}$). A value of $Br(K_{e2γ}^{\rm SD^+}) / Br(K_{e2(γ)}) = 1.12\pm0.07_{\rm stat} \pm 0.04_{\rm syst}$ was obtained. This indicates a partial branching ratio, $Br(K_{e2γ}^{\rm SD^+}, ~{p_e>200~{\rm MeV}/c}, ~{E_γ>10~{\rm MeV}})/Br(K_{\mu2}) =(1.85 \pm 0.11_{\rm{stat}} \pm 0.07_{\rm{syst}}) \times10^{-5}$, which is $25\%(\sim$2.5$σ)$ higher than the previous experimental result.

preprint2022arXiv

Update of beam coupling impedance evaluation by the stretched-wire method

In many cases beam coupling impedances or wake fields are calculated with computer simulator such as CST Studio Suite, GdfidL Electromagnetic Field Simulator and so on. But evaluation with the stretched-wire method is still very useful by its flexibility to the change of the device-under-test configuration, speed to get results and, more than anything, its accessibility on the real devices. One of the drawbacks in the practical procedure, difficulty of Thru-Reflect-Line calibration, is overcome using the calibration method recently introduced in high frequency vector network analyzers, "2-X THRU de-embedding". Here the procedure is explained in detail. The method has been successfully applied to RF cavity and FX kicker measurement in the J-PARC MR.

preprint2021arXiv

Universal map of gas-dependent kinetic selectivity in carbon nanotube growth

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, our kinetic model and experiments demonstrate that chirality-dependent growth rates emerge when sufficient amounts of carbon and etching agents are co-supplied. As the model can be extended to create kinetic maps as a function of gas compositions, our findings resolve discrepancies in literature and offer rational strategies for chirality selective growth for practical applications.