Source author record

A. Kobayashi

A. Kobayashi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

5works
6topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

Measurement of structure dependent radiative $K^{+} \rightarrow e^{+} νγ$ decays using stopped positive kaons

The structure dependent radiative $K^+ \rightarrow e^+ νγ$ ($K_{e2γ}^{\rm SD^+}$) decay was investigated with stopped positive kaons. The $e^+$ momentum spectra containing 574$\pm$30 $K_{e2γ}^{\rm SD^+}$ events with a $K^+ \rightarrow μ^+ ν$ ($K_{\mu2}$) background of 28$\pm$19 events were measured with and without a photon in coincidence and analyzed with Monte Carlo simulations for acceptance and detector response to extract the ratio of the branching ratio of the $K_{e2γ}^{\rm SD^+}$ decay and the $K^+ \rightarrow e^+ ν$ decay including the internal bremsstrahlung process ($K_{e2(γ)}$). A value of $Br(K_{e2γ}^{\rm SD^+}) / Br(K_{e2(γ)}) = 1.12\pm0.07_{\rm stat} \pm 0.04_{\rm syst}$ was obtained. This indicates a partial branching ratio, $Br(K_{e2γ}^{\rm SD^+}, ~{p_e>200~{\rm MeV}/c}, ~{E_γ>10~{\rm MeV}})/Br(K_{\mu2}) =(1.85 \pm 0.11_{\rm{stat}} \pm 0.07_{\rm{syst}}) \times10^{-5}$, which is $25\%(\sim$2.5$σ)$ higher than the previous experimental result.

preprint2022arXiv

Update of beam coupling impedance evaluation by the stretched-wire method

In many cases beam coupling impedances or wake fields are calculated with computer simulator such as CST Studio Suite, GdfidL Electromagnetic Field Simulator and so on. But evaluation with the stretched-wire method is still very useful by its flexibility to the change of the device-under-test configuration, speed to get results and, more than anything, its accessibility on the real devices. One of the drawbacks in the practical procedure, difficulty of Thru-Reflect-Line calibration, is overcome using the calibration method recently introduced in high frequency vector network analyzers, "2-X THRU de-embedding". Here the procedure is explained in detail. The method has been successfully applied to RF cavity and FX kicker measurement in the J-PARC MR.

preprint2021arXiv

Universal map of gas-dependent kinetic selectivity in carbon nanotube growth

Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, our kinetic model and experiments demonstrate that chirality-dependent growth rates emerge when sufficient amounts of carbon and etching agents are co-supplied. As the model can be extended to create kinetic maps as a function of gas compositions, our findings resolve discrepancies in literature and offer rational strategies for chirality selective growth for practical applications.

preprint2011arXiv

Emergence of Dirac Electron Pair in Charge Ordered State of Organic Conductor $α$-(BEDT-TTF)$_2$I$_3$

We re-examine the band structure of the stripe charge ordered state of $α$-(BEDT-TTF)$_2$I$_3$ under pressure by using an extended Hubbard model within the Hartree mean-field theory. By increasing pressure, we find a topological transition from a conventional insulator with a single-minimum in the dispersion relation at the M-point in the Brillouin zone, towards a new phase which exhibits a double-minimum. This transition is characterized by the appearance of a pair of Dirac electrons with a finite mass. Using the Luttinger-Kohn representation at the M-point, it is shown that such a variation of the band structure can be described by an effective $2 \times 2$ low energy Hamiltonian with a single driving parameter. The topological nature of this transition is confirmed by the calculation of the Berry curvature which vanishes in the conventional phase and has a double peak structure with opposite signs in the new phase. We compare the structure of this transition with a simpler situation which occurs in two-component systems, like boron-nitride.

preprint2009arXiv

Mossbauer spectroscopy study of the "mysterious" magnetic transition in lambda-(BETS)2FeCl4

The compound lambda-(BETS)2FeCl4 provides an effective demonstration of the interaction of pi-conduction electron and d-electron localized moment systems in molecular crystalline materials where antiferromagnetic insulating and magnetic field induced superconducting states can be realized. The metal-insulator transition has been thought to be cooperative, involving both the itinerant pi- electron and localized d-electron spins where antiferromagnetic order appears in both systems simultaneously. However, recent specific heat data has indicated otherwise [Akiba et al., J. Phys. Soc. Japan 78,033601(2009)]: although the pi-electron system orders antiferromagnetically and produces a metal-insulator transition, a "mysterious" paramagnetic d-electron state remains. We report 57Fe Mossbauer measurements that support the paramagnetic model, provided the d-electron spins remain in a fast relaxation state below the transition. From the measured hyperfine fields, we also determine the temperature dependence of the pi-d electron exchange field.