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A. I. Tarnovsky

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Published work

4 published item(s)

preprint2019arXiv

Regular and Chaotic Motion Domains in the Channeling Electron's Phase Space and Mean Level Density for Its Transverse Motion Energy

The motion of charged particles in a crystal in the axial channeling regime can be both regular and chaotic. The chaos in quantum case manifests itself in the statistical properties of the energy levels set. These properties have been studied previously for the electrons channeling along [110] direction of the silicon crystal, in the case when the classical motion was completely chaotic. The case of channeling along [100] direction is of special interest because the classical motion here can be both regular and chaotic for the same energy depending on the initial conditions. The semiclassical energy level density (as well as its part that corresponds to the regular motion domains in the phase space) is computed for the 10 GeV channeling electrons and positrons. It is demonstrated that the level spacing distribution for both electrons and positrons can be better described by Berry--Robnik distribution than by both Wigner (completely chaotic case) or Poisson (completely regular case) distributions.

preprint2015arXiv

Structure of the channeling electrons wave functions under dynamical chaos conditions

The stationary wave functions of fast electrons axially channeling in the silicon crystal near [110] direction have been found numerically for integrable and non-integrable cases, for which the classical motion is regular and chaotic, respectively. The nodal structure of the wave functions in the quasi-classical region, where the energy levels density is high, is agreed with quantum chaos theory predictions.

preprint2011arXiv

Incoherent bremsstrahlung in flat and bent crystals

Incoherent bremsstrahlung by high-energy particles in crystal is due to the thermal spread of atoms in relation to their equilibrium positions in the lattice. The simulation procedure developed earlier for the incoherent radiation is applied to the case of the electrons and positrons motion in the sinusoidally bent crystal. The results of simulation are in agreement with the data of recent experiments carried out at the Mainz Microtron MAMI. The possibility of use of the sinusoidally bent crystals as undulators is discussed.

preprint2010arXiv

Contribution of incoherent effects to the orientation dependence of bremsstrahlung from rapid electrons in crystal

The bremsstrahlung cross section for relativistic electrons in a crystal is split into the sum of coherent and incoherent parts (the last is due to a thermal motion of atoms in the crystal). Although the spectrum of incoherent radiation in crystal is similar to one in amorphous medium, the incoherent radiation intensity could demonstrate substantial dependence on the crystal orientation due to the electrons' flux redistribution in the crystal. In the present paper we apply our method of the incoherent bremsstrahlung simulation developed earlier to interpretation of some recent experimental results obtained at the Mainz Microtron MAMI.