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A. Hernández-Mínguez

A. Hernández-Mínguez appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall quant-ph cond-mat.mtrl-sci cond-mat.other physics.app-ph

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preprint2021arXiv

Acoustically induced coherent spin trapping

Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.

preprint2020arXiv

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.

preprint2020arXiv

Large non-reciprocal propagation of surface acoustic waves in epitaxial ferromagnetic/semiconductor hybrid structures

Non-reciprocal propagation of sound, that is, the different transmission of acoustic waves traveling along opposite directions, is a challenging requirement for the realization of devices like acoustic isolators and circulators. Here, we demonstrate the efficient non-reciprocal transmission of surface acoustic waves (SAWs) propagating along opposite directions of a GaAs substrate coated with an epitaxial Fe$_3$Si film. The non-reciprocity arises from the acoustic attenuation induced by the magneto-elastic (ME) interaction between the SAW strain field and spin waves in the ferromagnetic film, which depends on the SAW propagation direction and can be controlled via the amplitude and orientation of an external magnetic field. The acoustic transmission non-reciprocity, defined as the difference between the transmitted acoustic power for forward and backward propagation under ME resonance, reaches values of up to 20%, which are, to our knowledge, the largest non-reciprocity reported for SAWs traveling along a semiconducting piezoelectric substrate covered by a ferromagnetic film. The experimental results are well accounted for by a model for ME interaction, which also shows that non-reciprocity can be further enhanced by optimization of the sample design. These results make Fe$_3$Si/GaAs a promising platform for the realization of efficient non-reciprocal SAW devices.

preprint2016arXiv

Optical phonon modulation in semiconductors by surface acoustic waves

We investigate the modulation of optical phonons in semiconductor crystal by surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10\textsuperscript{-3} in the average Raman scattering intensity by optical phonons in Si and GaN crystals. The SAW-induced modifications in the Raman cross-section are dominated by the modulation of the optical phonon energy by the SAW strain field. In addition to this local contribution, the experiments give evidence for a weaker and non-local contribution arising from the spatial variation of the SAW strain field. The latter is attributed to the activation of optical modes with large wave vectors and, therefore, lower energies. The experimental results, which are well described by theoretical models for the two contributions, prove that optical phonons can be manipulated by SAWs with $μ$m wavelengths