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A. Hernandez-Cabrera

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Intersubband optical absorption in InSb stepped quantum wells. Effect of spin sublevels crossing

We study linear and non-linear coefficients of the intersubband absorption in InSb-based stepped quantum wells subjected to an in-plane magnetic field. We consider also a transverse electric field to achieve near resonance conditions. Taking into account the two deepest conduction levels and their corresponding Zeeman spin splitting sublevels, we calculate dispersion relations by means of an improved version of Kane model. Besides the known anti-crossing between down and up spin split sublevels, we obtain an extra spin level crossing for some determined parameters. This crossing clearly modifies the absorption spectrum for transitions among the four sublevels considered. We study a low electron density case, when only the first deepest sublevel is occupied, and a high density case with only the highest sublevel empty. We find a similar behavior of the absorption spectrum in both cases.

preprint2015arXiv

Spin multistability of the intersubband optical absorption in asymmetric coupled quantum wells

We study the multistable behavior of the intersubband optical absorption for InSb-based tunnel coupled quantum wells. We consider four sublevels coming from the Zeeman spin splitting of the two deepest levels, caused by a weak in-plane magnetic field. Photoexcitation with an intense terahertz pump produces the redistribution of nonequilibrium electrons between the spin sublevels. Based on the matrix density, we describe this electron redistribution by means of a system of balance equations for electron concentrations. The redistribution produces a photoinduced self-consistent potential, giving rise to the renormalization of energy distance between levels. Depending on total electron concentration and pumping efficiency, we find different multistable behaviors in the intersubband optical absorption spectrum.

preprint2013arXiv

Abrupt barrier contribution to the electron spin splitting in asymmetric coupled double quantum wells

We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of the Transfer Matrix Approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included the Landé g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of the electron spin-splitting energy lead to marked peculiarities in the density of states. Because the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.

preprint2011arXiv

The role of excitons and trions on electron spin polarization in quantum wells

We have studied the time evolution of the electron spin polarization under continuous photoexcitation in remotely n-doped semiconductor quantum wells. The doped region allows us to get the necessary excess of free electrons to form trions. We have considered electron resonant photoexcitation at free, exciton and trion electron energy levels. Also, we have studied the relative effect of photoexcitation energy density and doping concentration. In order to obtain the two-dimensional density evolution of the different species, we have performed dynamic calculations through the matrix density formalism. Our results indicate that photoexcitation of free electron level leads to a higher spin polarization. Also, we have found that increasing the photoexcitation energy or diminishing the doping enhances spin polarization.

preprint2009arXiv

Negative lateral conductivity of hot electrons in a biased superlattice

Nonequilibrium electron distribution in a superlattice subjected to a homogeneous electric field (biased superlattice with equipopulated levels) is studied within the tight-binding approximation, taking into account the scattering by optical and acoustic phonons and by lateral disorder. It is found that the distribution versus the in-plane kinetic energy depends essentially on the ratio between the Bloch energy and the optical phonon energy. The in-plane conductivity is calculated for low-doped structures at temperatures 4.2 K and 20 K. The negative conductivity is found for bias voltages corresponding to the Bloch-phonon resonance condition.