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Researcher profile

F. T. Vasko

F. T. Vasko contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nn

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Published work

24 published item(s)

preprint2014arXiv

Donor Spin Qubits in Ge-based Phononic Crystals

We propose qubits based on shallow donor electron spins in germanium. Spin-orbit interaction for donor spins in germanium is in many orders of magnitude stronger than in silicon. In a uniform bulk material it leads to very short spin lifetimes. However the lifetime increases dramatically when the donor is placed into a quasi-2D phononic crystal and the energy of the Zeeman splitting is tuned to lie within a phonon bandgap. In this situation single phonon processes are suppressed by energy conservation. The remaining two-phonon decay channel is very slow. The Zeeman splitting within the gap can be fine tuned to induce a strong, long-range coupling between the spins of remote donors via exchange by virtual phonons. This, in turn, opens a very efficient way to manipulate the quits. We explore various geometries of phononic crystals in order to maximize the coherent qubit-qubit coupling while keeping the decay rate minimal. We find that phononic crystals with unit cell sizes of 100-150 nm are viable candidates for quantum computing applications and suggest several spin-resonance experiments to verify our theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Breakdown electron-hole symmetry in graphene structure with a semiconductor gate

The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage dependencies of concentration and conductivity are calculated for the case of SiO_2 substrate placed over low- (moderate-) doped p-Si. Similar dependencies of the optical conductivity are analyzed for the case of high-kappa substrates (AlN, Al_2O_3, HfO_2, and ZrO_2). The comparison of our results with experimental data shows a good agreement for both cases.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transient stimulated emission from multi-split-gated graphene structure

Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast lateral spreading of carriers due to drift-diffusion processes is found for the case of a slow electron-hole recombination in the passive region. We show that with the large gate-to-graphene distance the drift process always precedes the diffusion process, due to the ineffective screening of the inplane electric field by the gates. Conditions for lasing with a gain above 100 cm$^{-1}$ are found for cases of single- and multi-layer graphene placed in the waveguide formed by the top and back gates. Both the waveguide losses and temperature effects are analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Diffusion of photoexcited carriers in graphene

The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electronic states in heterostructures formed by ultranarrow layers

Low-energy electronic states in heterosrtuctures formed by ultranarrow layer (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is written through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption in superlattice due to photoexcitation of electrons from localized states into minibands is strongly dependent on the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Interplay of intra- and interband absorption in a disordered graphene

The absorption of heavily doped graphene in the terahertz (THz) and mid-infrared (MIR) spectral regions is considered taking into account both the elastic scattering due to finite-range disorder and the variations of concentration due to long-range disorder. Interplay between intra- and interband transitions is analyzed for the high-frequency regime of response, near the Pauli blocking threshold. The gate voltage and temperature dependencies of the absorption efficiency are calculated. It is demonstrated that for typical parameters, the smearing of the interband absorption edge is determined by a unscreened part of long-range disorder while the intraband absorption is determined by finite-range scattering. The latter yields the spectral dependencies which deviate from those following from the Drude formula. The obtained dependencies are in good agreement with recent experimental results. The comparison of the results of our calculations with the experimental data provides a possibility to extract the disorder characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Superlattice formed by quantum-dot sheets: density of states and IR absorption

Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Green's function of electron is governed by the Dyson equation with the self-energy function which is determined the boundary conditions at quantum-dot sheets with weak damping in low-energy region. The parameters of superlattice formed by quantum-dot sheets are determined using of the short-range model of quantum dot. The density of states and spectral dependencies of the anisotropic absorption coefficient under mid-IR transitions from doped quantum dots into miniband states of superlattice strongly depend on dot concentration and on period of sheets. These dependencies can be used for characterization of the multi-layer structure and they determine parameters of different optoelectronic devices exploiting vertical transport of carriers through quantum-dot sheets.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Carrier heating and high-order harmonics generation in doped graphene by a strong ac electric field

The nonlinear response of electrons (holes) in doped graphene on ac pumping is considered theoretically for the frequency region above the energy relaxation rate but below the momentum and carrier-carrier scattering rates. Temporally-dependent heating of electrons by a strong ac field, which is described within the energy balance approach, leads to an effective generation of high-order harmonics. The efficiency of up-conversion of the 1 mm radiation into the third harmonic by a single-layer graphene is about 10^{-7} at pumping level ~100 kW/cm^2, room temperature, and concentration ~5 x 10^{11} cm^{-2}.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Carrier-induced modulation of radiation by a gated graphene

The modulation of the transmitted (reflected) radiation due to change of interband transitions under variation of carriers concentration by the gate voltage is studied theoretically. The calculations were performed for strongly doped graphene on high-K (Al_2O_3, HfO_2, AlN, and ZrO_2) or SiO_2 substrates under normal propagation of radiation. We have obtained the modulation depth above 10% depending on wavelength, gate voltage (i.e. carriers concentration), and parameters of substrate. The graphene - dielectric substrate - doped Si (as gate) structures can be used as an effective electrooptical modulator of near-IR and mid-IR radiation for the cases of high-K and SiO_2 substrates, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field

The heating of carriers in an intrinsic graphene under an abrupt switching off a dc electric field is examined taking into account both the energy relaxation via acoustic and optic phonons and the interband generation-recombination processes. The later are caused by the interband transitions due to optical phonon modes and thermal radiation. Description of the temporal and steady-state responses, including the nonequilibrium concentration and energy as well as the current-voltage characteristics, is performed. At room temperature, a nearly-linear current-voltage characteristic and a slowly-varied concentration take place for fields up to -- 20 kV/cm. Since a predominant recombination of high-energy carriers due to optical phonon emission at low temperatures, a depletion of concentration takes place below -- 250 K. For lower temperatures the current tends to be saturated and a negative differential conductivity appears below -- 170 K in the region of fields -- 10 V/cm.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Generation-recombination processes via acoustic phonons in a disorded graphene

Generation-recombination interband transitions via acoustic phonons are allowed in a disordered graphene because of violation of the energy-momentum conservation requirements. The generation-recombination processes are analyzed for the case of scattering by a short-range disorder and the deformation interaction of carriers with in-plane acoustic modes. The generation-recombination rates were calculated for the cases of intrinsic and heavily-doped graphene at room temperature. The transient evolution of nonequilibrium carriers is described by the exponential fit dependent on doping conditions and disorder level. The characteristic relaxation times are estimated to be about 150 - 400 ns for sample with the maximal sheet resistance ~5 kOhm. This rate is comparable with the generation-recombination processes induced by the thermal radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropic conductivity of doped graphene due to short-range non-symmetric scattering

The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Conductivity of a graphene strip: width and gate-voltage dependencies

We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5 - 3 $% μ$m can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Rabi oscillations under ultrafast excitation of graphene

We study coherent nonlinear dynamics of carriers under ultrafast interband excitation of an intrinsic graphene. The Rabi oscillations of response appear with increasing of pumping intensity. The photoexcited distribution is calculated versus time and energy taking into account the effects of energy relaxation and dephasing. Spectral and temporal dependencies of the response on a probe radiation (transmission and reflection coefficients) are considered for different pumping intensities and the Rabi oscillations versus time and intensity are analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Saturation of interband absorption in graphene

The transient response of an intrinsic graphene, which is caused by the ultrafast interband transitions, is studied theoretically for the range of pumping correspondent to the saturated absorption regime. Spectral and temporal dependencies of the photoexcited concentration as well as the transmission and relitive absotption coefficients are considered for mid-IR and visible (or near-IR) spectral regions at different durations of pulse and broadening energies. The characteristic intencities of saturation are calculated and the results are compared with the experimental data measured for the near-IR lasers with a saturable absorber. The negative absorption of a probe radiation during cascade emission of optical phonons is obtained.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spectral and polarization dependencies of luminescence by hot carriers in graphene

The luminescence caused by the interband transitions of hot carriers in graphene is considered theoretically. The dependencies of emission in mid- and near-IR spectral regions versus energy and concentration of hot carriers are analyzed; they are determined both by an applied electric field and a gate voltage. The polarization dependency is determined by the angle between the propagation direction and the normal to the graphene sheet. The characteristics of radiation from large-scale-area samples of epitaxial graphene and from microstructures of exfoliated graphene are considered. The averaged over angles efficiency of emission is also presented.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electrooptics of graphene: field-modulated reflection and birefringence

The elecrooptical response of graphene due to heating and drift of carriers is studied theoretically. Real and imaginary parts of the dynamic conductivity tensor are calculated for the case of effective momentum relaxation, when anisotropic contributions are small. We use the quasiequilibrium distribution of electrons and holes, characterized by the effective temperature of carriers and by concentrations, which are controlled by gate voltage and in-plane electric field. The geometry of normal propagation of probe radiation is considered, spectral and field dependences of the reflection coefficient and the relative absorption are analyzed. The ellipticity degree of the reflected and transmitted radiation due to small birefringence of graphene sheet with current have also been determined.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Hot carriers in an intrinsic graphene

Heating of carriers in an intrinsic graphene under dc electric field is considered taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation. The distribution of nonequilibrium carriers is obtained for the cases when the intercarrier scattering is unessential and when the carrier-carrier Coulomb scattering effectively establishes the quasiequilibrium distribution with the temperature and the density of carriers that are determined by the balance equations. Because of an interplay between weak energy relaxation and generation-recombination processes a very low threshold of nonlinear response takes place. The nonlinear current-voltage characteristics are calculated for the case of the momentum relaxation caused by the elastic scattering. Obtained current-voltage characteristics show low threshold of nonlinear behavior and appearance of the second ohmic region, for strong fields.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Negative lateral conductivity of hot electrons in a biased superlattice

Nonequilibrium electron distribution in a superlattice subjected to a homogeneous electric field (biased superlattice with equipopulated levels) is studied within the tight-binding approximation, taking into account the scattering by optical and acoustic phonons and by lateral disorder. It is found that the distribution versus the in-plane kinetic energy depends essentially on the ratio between the Bloch energy and the optical phonon energy. The in-plane conductivity is calculated for low-doped structures at temperatures 4.2 K and 20 K. The negative conductivity is found for bias voltages corresponding to the Bloch-phonon resonance condition.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Transient response under ultrafast interband excitation of an intrinsic graphene

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are analyzed. The distributions of carriers are obtained for the limiting cases when carrier-carrier scattering is negligible and when the intercarrier scattering imposes the quasiequilibrium distribution. The transient optical response (differential reflectivity and transmissivity) on a probe radiation and transient photoconductivity (response on a weak dc field) appears to be strongly dependent on the relaxation and recombination dynamics of carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation

We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. The energy distributions of carriers are calculated using a quasiclassic kinetic equation which accounts for the energy relaxation due to acoustic phonons and the radiative generation-recombination processes associated with thermal radiation and the carrier photoexcitation by incident radiation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. Due to the effect of saturation, the carrier distribution functions can exhibit plateaus around the pumping region at elevated intensities. As shown, at sufficiently strong mid-IR pumping, the population inversion can occur below the pumping energy. The graphene dc conductivity as a function of the pumping intensity exhibits a pronounced nonlinearity with a sub-linear region at fairly low intensities and a saturation at a strong pumping. However, an increase in the pumping intensity in very wide range leads only to a modest increase in the carrier concentration and, particularly, the dc conductivity. The graphene conductivity at mid-IR irradiation exhibit strong sensitivity to mechanisms of carrier momentum relaxation.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Thermal-radiation-induced nonequilibrium carriers in an intrinsic graphene

We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of nonequilibrium electron-hole pairs was obtained for the cases of low and high concentration of carriers. For the case when the interparticle scattering is unessential, the distribution function is determined by the interplay of intraband relaxation of energy due to acoustic phonons and interband radiative transitions caused by the thermal radiation. When the Coulomb scattering dominates, then the quasi-equilibrium distribution with effective temperature and non-equilibrium concentration, determined through balance equations, is realized. Due to the effect of thermal radiation with temperature $T_r\neq T$ concentration and conductivity of carriers in graphene modify essentially. It is demonstrated, that at $T_r>T$ the negative interband absorption, caused by the inversion of carriers distribution, can occur, i.e. graphene can be unstable under thermal irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Gain without inversion in a biased superlattice

Intersubband transitions in a superlattice under homogeneous electric field is studied within the tight-binding approximation. Since the levels are equi-populated, the non-zero response appears beyond the Born approximation. Calculations are performed in the resonant approximation with scattering processes exactly taken into account. The absorption coefficient is equal zero for the resonant excitation while a negative absorption (gain without inversion) takes place below the resonance. A detectable gain in the THz spectral region is obtained for the low-doped $GaAs$-based superlattice and spectral dependencies are analyzed taking into account the interplay between homogeneous and inhomogeneous mechanisms of broadening.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

KP-approach for non-symmetric short-range defects: resonant states and alloy bandstructure

The short-range defect with reduced symmetry is studied in the framework of KP-approach taking into account a matrix structure of potential energy in the equations for envelope functions. The case of the narrow-gap semiconductor, with defects which are non-symmetric along the [001], [110], or [111] directions, is considered. Resonant state at a single defect is analyzed within the Koster-Slater approximation. The bandstructure modification of the alloy, formed by non-symmetric impurities, is discussed and a generalized virtual crystal approximation is introduced.

0 citations0 reviewsNo code linkedOpen access