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A. Gadaleta

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2014arXiv

Growth and characterization of conducting LaAlO3/EuTiO3/SrTiO3 het-erostructures

We studied the structural, magnetic and transport properties of LaAlO3/EuTiO3/SrTiO3 heterostructures grown by Pulsed Laser Deposition. The samples have been characterized in-situ by electron diffraction and scanning probe mi-croscopy and ex-situ by transport measurements and x-ray absorption spectroscopy. LaAlO3/EuTiO3/SrTiO3 films show a ferromagnetic transition at T<7.5 K, related to the ordering of Eu2+ spins, even in samples characterized by just two EuTiO3 unit cells. A finite metallic conductivity is observed only in the case of samples composed by one or two EuTiO3 unit cells and, simultaneously, by a LaAlO3 thickness equal or above 4 unit cells. The role of ferromagnetic EuTiO3 on the transport properties of delta-doped LaAlO3/EuTiO3/SrTiO3 is critically discussed.

preprint2013arXiv

Large band offset as driving force of 2-dimensional electron confinement: the case of SrTiO$_3$/SrZrO$_3$ interface

Using advanced first-principles calculations we predict that the non-polar SrTiO$_3$/SrZrO$_3$ (001) interface, designed as either thin SrZrO$_3$ film deposited on SrTiO$_3$ or short-period (SrTiO$_3$)$_m$/(SrZrO$_3$)$_n$ superlattice, host a 2-dimensionally confined electron gas. Mobile electron charge due to native impurities, field-effect, or modulation doping remains tightly trapped at the interface. Key ingredients for this occurrence are a) the peculiar chemistry of 3d orbitals, b) the large band offset at titanate-zirconate interface.

preprint2013arXiv

Origin of interface magnetism in BiMnO3/SrTiO3 and LaAlO3/SrTiO3 heterostructures

Possible ferromagnetism induced in otherwise non-magnetic materials has been motivating intense research in complex oxide heterostructures. Here we show that a confined magnetism is realized at the interface between SrTiO3 and two insulating polar oxides, BiMnO3 and LaAlO3. By using polarization dependent x-ray absorption spectroscopy, we find that in both cases the magnetic order is stabilized by a negative exchange interaction between the electrons transferred to the interface and local magnetic moments. These local magnetic moments are associated to Ti3+ ions at the interface itself for LaAlO3/SrTiO3 and to Mn3+ ions in the overlayer for BiMnO3/SrTiO3. In LaAlO3/SrTiO3 the induced magnetic moments are quenched by annealing in oxygen, suggesting a decisive role of oxygen vacancies in the stabilization of interfacial magnetism.

preprint2010arXiv

Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics

We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that a fraction of out-of-equilibrium spin polarized carrier actually travel across the Cu_{2}O layer up to distances of almost 100 nm at low temperature. The corresponding spin diffusion length dspin is estimated around 40 nm. Furthermore, we find that the insertion of a SrTiO_{3} tunneling barrier does not improve spin injection, likely due to the matching of resistances at the interfaces. Our result on dspin may be likely improved, both in terms of Cu_{2}O crystalline quality and sub-micrometric morphology and in terms of device geometry, indicating that Cu_{2}O is a potential material for efficient spin transport in devices based on crystalline oxides.